# APT5040CNR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT5040CNR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 71 nC

Rise Time (tr): 21 nS

Drain-Source Capacitance (Cd): 330 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO254

APT5040CNR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

## APT5040CNR Datasheet (PDF)

1.1. apt5040cnr.pdf Size:52K _apt

D TO-254 G S APT5040CNR 500V 13.0A 0.400Ω TM POWER MOS IV Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS • Faster Switching • 100% Avalanche Tested • Popular TO-254 Package • Low Gate Charge • Similar to the 2N7228, JX2N7228 and JV2N7228 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT5040CNR UNIT VDSS Drai

3.1. apt5040kfllg.pdf Size:93K _update_mosfet

APT5040KFLL Ω 500V 17A 0.400Ω Ω Ω Ω R POWER MOS 7 FREDFET TO-220 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) G and Qg. Power MOS 7® combines lower conduction and switching losses D S along with exceptionally

5.1. apt5018bfllg apt5018sfllg.pdf Size:94K _update_mosfet

APT5018BFLL APT5018SFLL Ω 500V 27A 0.180Ω Ω Ω Ω BLL R POWER MOS 7 FREDFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SLL al

5.2. apt5025an apt5030an.pdf Size:375K _update_mosfet

5.3. apt50m50l2fllg.pdf Size:95K _update_mosfet

APT50M50L2FLL Ω 500V 89A 0.050Ω Ω Ω Ω R POWER MOS 7 FREDFET TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

5.4. apt5015bvfrg.pdf Size:115K _update_mosfet

APT5015BVFR APT5015SVFR Ω 500V 32A 0.150Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® SVFR also achieves faster switching speeds through optimized gate layout.

5.5. apt5016bfllg apt5016sfllg.pdf Size:201K _update_mosfet

APT5016BFLL APT5016SFLL Ω 500V 30A 0.160Ω Ω Ω Ω R POWER MOS 7 FREDFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with e

5.6. apt50m85b2vfrg apt50m85lvfrg.pdf Size:137K _update_mosfet

APT50M85B2VFR APT50M85LVFR Ω 500V 56A 0.085Ω Ω Ω Ω B2VFR POWER MOS V® FREDFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout

5.7. apt5014b2vrg.pdf Size:55K _update_mosfet

APT5014B2VR 500V 37A 0.140Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lo

5.8. apt50m80b2vfrg apt50m80lvfrg.pdf Size:94K _update_mosfet

APT50M80B2VFR APT50M80LVFR Ω 500V 58A 0.080Ω Ω Ω Ω POWER MOS V® FREDFET TM T-Max Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. •

5.9. apt5010b2fllg apt5010lfllg.pdf Size:171K _update_mosfet

APT5010B2FLL APT5010LFLL Ω 500V 46A 0.100Ω Ω Ω Ω R B2FLL POWER MOS 7 FREDFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses a

5.10. apt5014bllg apt5014sllg.pdf Size:173K _update_mosfet

APT5014BLL APT5014SLL Ω 500V 35A 0.140Ω Ω Ω Ω R POWER MOS 7 MOSFET D3PAK TO-247 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exce

5.11. apt5012jn.pdf Size:54K _update_mosfet

D G APT5010JN 500V 48.0A 0.10Ω S APT5012JN 500V 43.0A 0.12Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 5010JN 5012JN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Cu

5.12. apt50m75b2fllg apt50m75lfllg.pdf Size:165K _update_mosfet

APT50M75B2FLL APT50M75LFLL Ω 500V 57A 0.075Ω Ω Ω Ω R B2FLL POWER MOS 7 FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses

5.13. apt5024bllg.pdf Size:162K _update_mosfet

APT5024BLL APT5024SLL Ω 500V 22A 0.240Ω Ω Ω Ω R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SLL along

5.14. apt5014b2vfrg apt5014lvfrg.pdf Size:114K _update_mosfet

APT5014B2VFR APT5014LVFR Ω 500V 37A 0.140Ω Ω Ω Ω B2VFR POWER MOS V® FREDFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

5.15. apt5022bn.pdf Size:47K _update_mosfet

D TO-247 G APT5020BN 500V 28.0A 0.20Ω S APT5022BN 500V 27.0A 0.22Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 5020BN 5022BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25°C 28 27 Amps IDM Pulsed Drain Current 1 112 108

5.16. apt50m85lvr.pdf Size:40K _update_mosfet

APT50M85B2VR APT50M85LVR 500V 56A 0.085W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specificatio

5.17. apt50m50jll.pdf Size:77K _update_mosfet

APT50M50JLL Ω 500V 71A 0.050Ω Ω Ω Ω R POWER MOS 7 MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses "UL Recognized" along with exceptionally

5.18. apt50m60l2vfrg.pdf Size:158K _update_mosfet

APT50M60L2VFR Ω 500V 77A 0.060Ω Ω Ω Ω POWER MOS V® FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • TO-264 MAX Packa

5.19. apt50m75b2llg apt50m75lllg.pdf Size:164K _update_mosfet

APT50M75B2LL APT50M75LLL Ω 500V 57A 0.075Ω Ω Ω Ω R B2LL POWER MOS 7 MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

5.20. apt5018sll.pdf Size:104K _update_mosfet

APT5018BLL APT5018SLL Ω 500V 27A 0.180Ω Ω Ω Ω R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SLL along

5.21. apt5030bn.pdf Size:36K _update_mosfet

D TO-247 G APT5025BN 500V 23.0A 0.25Ω S APT5030BN 500V 21.0A 0.30Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 5025BN 5030BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25°C 23 21 Amps IDM Pulsed Drain Current 1 92 84 V

5.22. apt50n60jccu2.pdf Size:62K _update_mosfet

APT50N60JCCU2 VDSS = 600V ISOTOP® Boost chopper RDSon = 45mΩ max @ Tj = 25°C Super Junction ID = 50A @ Tc = 25°C MOSFET Power Module Application • AC and DC motor control K • Switched Mode Power Supplies • Power Factor Correction • Brake switch D Features • G - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge S - Avalanche e

5.23. apt50m60l2vrg.pdf Size:167K _update_mosfet

APT50M60L2VR Ω 500V 77A 0.060Ω Ω Ω Ω POWER MOS V® MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package

5.24. apt50m65b2llg apt50m65lllg.pdf Size:98K _update_mosfet

APT50M65B2LL APT50M65LLL Ω 500V 67A 0.065Ω Ω Ω Ω R B2LL POWER MOS 7 MOSFET T-MaxTM Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses LLL

5.25. apt5024svfrg.pdf Size:113K _update_mosfet

APT5024BVFR APT5024SVFR Ω 500V 22A 0.240Ω Ω Ω Ω BVFR FREDFET POWER MOS V® D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® SVFR also achieves faster switching speeds through optimized gate layout.

5.26. apt5024bll apt5024sll.pdf Size:170K _update_mosfet

APT5024BLL APT5024SLL Ω 500V 22A 0.240Ω Ω Ω Ω R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SLL along

5.27. apt5024sfll apt5024sfllg.pdf Size:216K _update_mosfet

APT5024BFLL APT5024SFLL 500V 22A 0.240Ω BFLL R POWER MOS 7 FREDFET (B) Power MOS 7® is a new generation of low loss, high voltage, N-Channel D3PAK enhancement mode power MOSFETS. Both conduction and switch- (S) ing losses are addressed with Power MOS 7® by significantly lowering C G E RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along wi

5.28. apt50m80b2vrg apt50m80lvrg.pdf Size:92K _update_mosfet

APT50M80B2VR APT50M80LVR Ω 500V 58A 0.080Ω Ω Ω Ω POWER MOS V® TM T-Max Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical

5.29. apt5010b2llg apt5010lllg.pdf Size:170K _update_mosfet

APT5010B2LL APT5010LLL Ω 500V 46A 0.100Ω Ω Ω Ω B2LL R POWER MOS 7 MOSFET T-MAX™ TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses LLL

5.30. apt50m60jvfr.pdf Size:165K _update_mosfet

APT50M60JVFR Ω 500V 63A 0.060Ω Ω Ω Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP® • Popula

5.31. apt50m65lfll.pdf Size:99K _update_mosfet

APT50M65B2FLL APT50M65LFLL Ω 500V 67A 0.065Ω Ω Ω Ω R B2FLL POWER MOS 7 FREDFET T-MaxTM Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses L

5.32. apt5014bfllg apt5014sfllg.pdf Size:164K _update_mosfet

APT5014BFLL APT5014SFLL Ω 500V 35A 0.140Ω Ω Ω Ω R POWER MOS 7 FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with ex

5.33. apt5017svfrg.pdf Size:62K _update_mosfet

APT5017BVFR APT5017SVFR Ω 500V 30A 0.170Ω Ω Ω Ω POWER MOS V® FREDFET TO-247 D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Fast

5.34. apt50m50l2llg.pdf Size:95K _update_mosfet

APT50M50L2LL Ω 500V 89A 0.050Ω Ω Ω Ω R POWER MOS 7 MOSFET TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fa

5.35. apt5016bllg.pdf Size:106K _update_mosfet

APT5016BLL APT5016SLL Ω 500V 30A 0.160Ω Ω Ω Ω R POWER MOS 7 MOSFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with excep

5.36. apt50m60jvr.pdf Size:147K _update_mosfet

APT50M60JVR Ω 500V 63A 0.060Ω Ω Ω Ω POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP® • Popular

5.37. apt5020bn.pdf Size:51K _apt

D TO-247 G APT5020BN 500V 28.0A 0.20Ω S APT5022BN 500V 27.0A 0.22Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 5020BN 5022BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25°C 28 27 Amps IDM Pulsed Drain Current 1 112 108

5.38. apt50m85b2vr.pdf Size:36K _apt

APT50M85B2VR APT50M85LVR 500V 56A 0.085W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specificatio

5.39. apt5014bll.pdf Size:61K _apt

APT5014BLL APT5014SLL 500V 35A 0.140W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

5.40. apt5010lvr.pdf Size:64K _apt

APT5010LVR 500V 47A 0.100Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Faster Switching • 100% Avalanche Tested D • Lower

5.41. apt50m65b2fll.pdf Size:63K _apt

APT50M65B2FLL APT50M65LFLL 500V 67A 0.065W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio

5.42. apt5026hvr.pdf Size:59K _apt

APT5026HVR 500V 18.5A 0.260Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lowe

5.43. apt5014b2lc.pdf Size:33K _apt

APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC TM POWER MOS VI T-MAX™ Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, LLC delivers exceptionally fast

5.44. apt5010b2ll.pdf Size:68K _apt

APT5010B2LL APT5010LLL 500V 46A 0.100W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

5.45. apt50m50.pdf Size:36K _apt

APT50M50PVR 500V 74.5A 0.050Ω POWER MOS V® P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

5.46. apt5010jvru3.pdf Size:112K _apt

APT5010JVRU3 500V 44A 0.100Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® D • Faster Switching • 100% Avalan

5.47. apt50m85b2vfr.pdf Size:39K _apt

APT50M85B2VFR APT50M85LVFR 500V 56A 0.085W B2VFR POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVFR • Identical

5.48. apt5010b2vr.pdf Size:61K _apt

APT5010B2VR 500V 47A 0.100Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

5.49. apt5010jfll.pdf Size:63K _apt

APT5010JFLL 500V 44A 0.100W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

5.50. apt5017blc.pdf Size:34K _apt

APT5017BLC APT5017SLC 500V 30A 0.170W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast switc

5.51. apt5028bvr.pdf Size:62K _apt

APT5028BVR 500V 20A 0.280Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

5.52. apt5010jvfr.pdf Size:73K _apt

APT5010JVFR 500V 44A 0.100Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode •

5.53. apt50m38jfll.pdf Size:62K _apt

APT50M38JFLL 500V 91A 0.038W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

5.54. apt5010jn.pdf Size:60K _apt

D G APT5010JN 500V 48.0A 0.10Ω S APT5012JN 500V 43.0A 0.12Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 5010JN 5012JN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Cu

5.55. apt5028svr.pdf Size:65K _apt

APT5028SVR 500V 20A 0.280Ω POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

5.56. apt50m65jfll.pdf Size:63K _apt

APT50M65JFLL 500V 60A 0.065W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

5.57. apt50m50jvfr.pdf Size:73K _apt

APT50M50JVFR 500V 77A 0.050Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode

5.58. apt5010jlc.pdf Size:34K _apt

APT5010JLC 500V 44A 0.100 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOTO

5.59. apt5016bfll.pdf Size:63K _apt

APT5016BFLL APT5016SFLL 500V 30A 0.160W TM BLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

5.60. apt5016bll.pdf Size:61K _apt

APT5016BLL APT5016SLL 500V 30A 0.160W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

5.61. apt5012wvr.pdf Size:61K _apt

APT5012WVR 500V 40A 0.120Ω POWER MOS V® TO-267 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

5.62. apt50m75b2fll.pdf Size:63K _apt

APT50M75B2FLL APT50M75LFLL 500V 57A 0.075W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio

5.63. apt50m38jll.pdf Size:60K _apt

APT50M38JLL 500V 91A 0.038 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

5.64. apt5032cvr.pdf Size:61K _apt

APT5032CVR 500V 14A 0.320Ω POWER MOS V® TO-254 TO-254 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested

5.65. apt5024avr.pdf Size:60K _apt

APT5024AVR 500V 18.5A 0.240Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

5.66. apt50gf60b2rd.pdf Size:112K _apt

APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max™ TO-264 (B2RD) The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT™ combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C • Low Forward Voltage Drop

5.67. apt50m50jvr.pdf Size:71K _apt

APT50M50JVR 500V 77A 0.050Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

5.68. apt50m65b2ll.pdf Size:68K _apt

APT50M65B2LL APT50M65LLL 500V 67A 0.065W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s

5.69. apt5010jvru2.pdf Size:111K _apt

APT5010JVRU2 500V 44A 0.100Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® D • Faster Switching • 100% Avalan

5.70. apt5025bn.pdf Size:51K _apt

D TO-247 G APT5025BN 500V 23.0A 0.25Ω S APT5030BN 500V 21.0A 0.30Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 5025BN 5030BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25°C 23 21 Amps IDM Pulsed Drain Current 1 92 84 V

5.71. apt5010b2lc-47434900.pdf Size:117K _apt

APT5010B2LC 500V 47A 0.100 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage T-MAX™ N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and C . rss Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. D • L

5.72. apt5017bvr.pdf Size:60K _apt

APT5017BVR 500V 30A 0.170Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

5.73. apt5020.pdf Size:62K _apt

APT5020SVR 500V 26A 0.200Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower Le

5.74. apt5010b2fll.pdf Size:63K _apt

APT5010B2FLL APT5010LFLL 500V 46A 0.100W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

5.75. apt50m50l2ll.pdf Size:63K _apt

APT50M50L2LL 500V 87A 0.050W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent

5.76. apt50m80b2lc.pdf Size:34K _apt

APT50M80B2LC APT50M80LLC 500V 58A 0.080W B2LC TM POWER MOS VI T-MAX™ Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, LLC delivers exceptionally fas

5.77. apt5018bfll.pdf Size:63K _apt

APT5018BFLL APT5018SFLL 500V 27A 0.180W TM BLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

5.78. apt5014lvr.pdf Size:63K _apt

APT5014LVR 500V 37A 0.140Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

5.79. apt50gf60ju3.pdf Size:468K _apt

APT50GF60JU3 ISOTOP® Buck chopper VCES = 600V IC = 50A @ Tc = 90°C NPT IGBT C Application • AC and DC motor control • Switched Mode Power Supplies G Features • Non Punch Through (NPT) THUNDERBOLT IGBT® - Low voltage drop E - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche

5.80. apt5017svr.pdf Size:63K _apt

APT5017SVR 500V 30A 0.170Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower L

5.81. apt5014b2vr.pdf Size:62K _apt

APT5014B2VR 500V 37A 0.140Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lo

5.82. apt5010lvfr.pdf Size:66K _apt

APT5010LVFR 500V 47A 0.100Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tes

5.83. apt5024bvr.pdf Size:59K _apt

APT5024BVR 500V 22A 0.240Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

5.84. apt50gp60b.pdf Size:88K _apt

APT50GP60B 600V ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G switchmode power supplies. C E • Low Conduction Loss • 200 kHz operation @ 400V, 26A C • Low Gate Charge

5.85. apt50m80.pdf Size:33K _apt

APT50M80B2VFR 500V 58A 0.080W POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche T

5.86. apt50m50l2fll.pdf Size:65K _apt

APT50M50L2FLL 500V 89A 0.050W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds

5.87. apt50gf120jrd.pdf Size:52K _apt

APT50GF120JRD 1200V 75A Fast IGBT & FRED The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology the Fast IGBT™ combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP® • Low Forward Voltage Drop • High Freq. Switching to 20KHz C • L

5.88. apt5024bvfr.pdf Size:61K _apt

APT5024BVFR 500V 22A 0.240Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tes

5.89. apt50gp60s.pdf Size:95K _apt

APT50GP60B APT50GP60S 600V ® POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E G E switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 26

5.90. apt5030avr.pdf Size:61K _apt

APT5030AVR 500V 14.7A 0.300Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

5.91. apt5020svfr.pdf Size:64K _apt

APT5020SVFR 500V 26A 0.200Ω POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Test

5.92. apt50m50pvr.pdf Size:36K _apt

APT50M50PVR 500V 74.5A 0.050Ω POWER MOS V® P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

5.93. apt50m75jll.pdf Size:60K _apt

APT50M75JLL 500V 52A 0.075 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

5.94. apt5017.pdf Size:63K _apt

APT5017SVR 500V 30A 0.170Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower L

5.95. apt50gf60ju2.pdf Size:468K _apt

APT50GF60JU2 ISOTOP® Boost chopper VCES = 600V IC = 50A @ Tc = 90°C NPT IGBT K Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction C • Brake switch Features G • Non Punch Through (NPT) THUNDERBOLT IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes -

5.96. apt5020svr.pdf Size:62K _apt

APT5020SVR 500V 26A 0.200Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower Le

5.97. apt50gt120ju3.pdf Size:605K _apt

APT50GT120JU3 ISOTOP® Buck chopper VCES = 1200V IC = 50A @ Tc = 80°C Trench IGBT C Application • AC and DC motor control • Switched Mode Power Supplies G Features • Trench + Field Stop IGBT® Technology E - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche

5.98. apt5024bfll.pdf Size:71K _apt

APT5024BFLL APT5024SFLL 500V 22A 0.240W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

5.99. apt50m75jfll.pdf Size:62K _apt

APT50M75JFLL 500V 52A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

5.100. apt5016.pdf Size:63K _apt

APT5016BFLL APT5016SFLL 500V 30A 0.160W TM BLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

5.101. apt50m65jll.pdf Size:60K _apt

APT50M65JLL 500V 60A 0.065 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

5.102. apt50m60l2vr.pdf Size:33K _apt

APT50M60L2VR 500V 77A 0.060W POWER MOS V® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • 100% Avalanche Tested D

5.103. apt50gf60br.pdf Size:80K _apt

APT50GF60BR APT50GF60BR 600V 75A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. C • Low Forward Voltage Drop • High Freq. Switching to 20KHz G C G • Low Tail Current • Ultra Low Leakage Current E • Avalan

5.104. apt5024svr.pdf Size:32K _apt

APT5024SVR 500V 22A 0.240Ω POWER MOS V® Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower Leak

5.105. apt50m80b2vfr.pdf Size:33K _apt

APT50M80B2VFR 500V 58A 0.080W POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche T

5.106. apt50gp60j.pdf Size:95K _apt

APT50GP60J 600V ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP® switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 19A C • Low Gat

5.107. apt5020bvr.pdf Size:59K _apt

APT5020BVR 500V 26A 0.200Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

5.108. apt5010jll.pdf Size:60K _apt

APT5010JLL 500V 44A 0.100 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "

5.109. apt5010jvr.pdf Size:71K _apt

APT5010JVR 500V 44A 0.100Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche T

5.110. apt5010b2.pdf Size:63K _apt

APT5010B2FLL APT5010LFLL 500V 46A 0.100W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

5.111. apt5014.pdf Size:61K _apt

APT5014BLL APT5014SLL 500V 35A 0.140W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

5.112. apt5014bfll.pdf Size:71K _apt

APT5014BFLL APT5014SFLL 500V 35A 0.140W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

5.113. apt50m80jlc.pdf Size:34K _apt

APT50M80JLC 500V 52A 0.080 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOT

5.114. apt50gt120ju2.pdf Size:605K _apt

APT50GT120JU2 ISOTOP® Boost chopper VCES = 1200V IC = 50A @ Tc = 80°C Trench IGBT K Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction C • Brake switch Features G • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes -

5.115. apt5017bvfr.pdf Size:62K _apt

APT5017BVFR 500V 30A 0.170Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Test

5.116. apt50m50jfll.pdf Size:71K _apt

APT50M50JFLL 500V 71A 0.050W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

5.117. apt5022avr.pdf Size:58K _apt

APT5022AVR 500V 21A 0.220Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower L

5.118. apt50m60jn.pdf Size:60K _apt

D G APT50M60JN 500V 71A 0.06OΩ S "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT Symbol Parameter 50M60JN UNIT VDSS Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25°C 71 Amps IDM, lLM Pulse

5.119. apt5019hvr.pdf Size:60K _apt

APT5019HVR 500V 24A 0.190Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

5.120. apt50m65.pdf Size:63K _apt

APT50M65B2FLL APT50M65LFLL 500V 67A 0.065W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio

5.121. apt50gp60b2df2.pdf Size:196K _apt

TYPICAL PERFORMANCE CURVES APT50GP60B2DF2 APT50GP60B2DF2 600V ® POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E • Low Conduction Loss • 200 kH

5.122. apt5015.pdf Size:60K _apt

APT5015BVR 500V 32A 0.150Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

5.123. apt50gn120b2.pdf Size:187K _apt

TYPICAL PERFORMANCE CURVES APT50GN120B2 APT50GN120B2 1200V Utilizing the latest Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight T-Max™ parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate r

5.124. apt50m60l2vfr.pdf Size:79K _apt

APT50M60L2VFR 500V 77A 0.060W POWER MOS V® FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • Faster Switching D

5.125. apt5010b2vfr.pdf Size:64K _apt

APT5010B2VFR 500V 47A 0.100Ω POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche

5.126. apt50m75jllu2.pdf Size:124K _apt

APT50M75JLLU2 APT50M75JLLU2 500V 51A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inher

5.127. apt5020blc.pdf Size:34K _apt

APT5020BLC APT5020SLC 500V 26A 0.200W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast switc

5.128. apt5010b2lc.pdf Size:64K _apt

APT5010B2LC APT5010LLC 500V 47A 0.100W B2LC TM POWER MOS VI T-MAX™ Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate LLC layout, delivers exceptionally fast

5.129. apt50m50jlc.pdf Size:34K _apt

APT50M50JLC 500V 77A 0.050 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOT

5.130. apt5015blc.pdf Size:28K _apt

APT5015BLC 500V 32A 0.150 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. D • Lower G

5.131. apt50gp60jdf2.pdf Size:210K _apt

APT50GP60JDF2 600V ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOPfi switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 19A C • Low

5.132. apt50m85jvr.pdf Size:74K _apt

APT50M85JVR 500V 50A 0.085Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

5.133. apt5015bvr.pdf Size:60K _apt

APT5015BVR 500V 32A 0.150Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

5.134. apt5018bll.pdf Size:61K _apt

APT5018BLL APT5018SLL 500V 27A 0.180W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

5.135. apt50m85jvfr.pdf Size:76K _apt

APT50M85JVFR 500V 50A 0.085Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode

5.136. apt5020bvfr.pdf Size:61K _apt

APT5020BVFR 500V 26A 0.200Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Test

5.137. apt50gf60hr.pdf Size:25K _apt

APT50GF60HR 600V 55A Fast IGBT TO-258 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop • High Freq. Switching to 20KHz C C E • Low Tail Current • Ultra Low Leakage Current G G • Avalanche Rated

5.138. apt5012.pdf Size:61K _apt

APT5012WVR 500V 40A 0.120Ω POWER MOS V® TO-267 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

5.139. apt50gf120b2r.pdf Size:37K _apt

APT50GF120B2R APT50GF120LR 1200V 80A APT50GF120B2R Fast IGBT T-Max™ TO-264 (B2R) (LR) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. G C G • Low Forward Voltage Drop • High Freq. Switching to 20KHz E C APT50GF120LR C E

5.140. apt50m80b2vr.pdf Size:36K _apt

APT50M80B2VR APT50M80LVR 500V 58A 0.080W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specificatio

5.141. apt50m75b2ll.pdf Size:68K _apt

APT50M75B2LL APT50M75LLL 500V 57A 0.075W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s

5.142. apt5027.pdf Size:96K _apt

http://www.chipdocs.com http://www.chipdocs.com

5.143. apt50gf120lrg.pdf Size:526K _igbt_a

TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) FAST IGBT T-Max® TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using (L) Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt

5.144. apt50gt60brdq2g.pdf Size:467K _igbt_a

TYPICAL PERFORMANCE CURVES APT50GT60BRDQ2(G) 600V APT50GT60BRDQ2 APT50GT60BRDQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. G C E • Low Forward Voltage Drop

5.145. apt50gt120b2rdlg.pdf Size:209K _igbt_a

TYPICAL PERFORMANCE CURVES APT50GT120B2RDL(G) 1200V APT50GT120B2RDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® of- fers superior ruggedness and ultrafast switching speed. Typical Applicatio

5.146. apt50gs60srdq2g.pdf Size:607K _igbt_a

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ

5.147. apt50gf120b2rg.pdf Size:526K _igbt_a

TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) FAST IGBT T-Max® TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using (L) Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt

5.148. apt50gp60jdq2.pdf Size:450K _igbt_a

TYPICAL PERFORMANCE CURVES APT50GP60JDQ2 600V APT50GP60JDQ2 ® ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP® file # E145592 • Low

5.149. apt50gs60brdq2g.pdf Size:607K _igbt_a

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ

5.150. apt50gt120b2rdq2g.pdf Size:1104K _igbt_a

APT50GT120B2RDQ2G 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior rugged- ness and ultrafast switching speed. Features • Low Forward Voltage Drop • RBSOA and SCSOA Rated • Low Tail Current • High Frequency Switching to 50KHz

5.151. apt50gp60bg.pdf Size:96K _igbt_a

APT50GP60B APT50GP60S 600V ® POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E G E switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 26

5.152. apt50gt60brdlg.pdf Size:207K _igbt_a

TYPICAL PERFORMANCE CURVES APT50GT60BRDL(G) 600V APT50GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® of- fers superior ruggedness and ultrafast switching speed. Typical Applicati

5.153. apt50gp60b2dq2g.pdf Size:425K _igbt_a

TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2(G) 600V APT50GP60B2DQ2 APT50GP60B2DQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® (B2) POWER MOS 7 IGBT T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

5.154. apt50gt120b2rg.pdf Size:196K _igbt_a

APT50GT120B2R(G) APT50GT120LR(G) 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior rugged- ness and ultrafast switching speed. Features • Low Forward Voltage Drop • RBSOA and SCSOA Rated • Low Tail Current • High Frequency Sw

5.155. apt50gp60j.pdf Size:105K _igbt_a

APT50GP60J 600V ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP® switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 19A C • Low Gat

5.156. apt50gf120jrdq3.pdf Size:443K _igbt_a

TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 1200V APT50GF120JRDQ3 ® FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP® file # E145592 • Low Forwa

5.157. apt50gt60brg.pdf Size:151K _igbt_a

TYPICAL PERFORMANCE CURVES 600VAPT50GT60BR_SR(G) APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B) Thunderbolt IGBT® D3PAK (S) C The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch G E Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast G switching s

5.158. apt50gn60bg.pdf Size:292K _igbt_a

TYPICAL PERFORMANCE CURVES APT50GN60B(G) 600V APT50GN60B APT50GN60BG* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

5.159. apt50gn120b2g.pdf Size:190K _igbt_a

TYPICAL PERFORMANCE CURVES APT50GN120B2(G) 1200V APT50GN120B2 APT50GN120B2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design TM T-Max results in superior VCE(on) performance. Easy paralleling results from very t

5.160. apt50gn120l2dq2g.pdf Size:226K _igbt_a

TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2(G) 1200V APT50GN120L2DQ2 APT50GN120L2DQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264 Max results in superior VCE(on) performance. Easy paralleling result

5.161. apt50gt120lrdq2g.pdf Size:428K _igbt_a

TYPICAL PERFORMANCE CURVES APT50GT120LRDQ2(G) 1200V APT50GT120LRDQ2 APT50GT120LRDQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-264 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage

5.162. apt50gp60ldlg.pdf Size:189K _igbt_a

TYPICAL PERFORMANCE CURVES APT50GP60LDL(G) APT50GP60LDL(G) 600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT® The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmo

5.163. apt50gt60srg.pdf Size:151K _igbt_a

TYPICAL PERFORMANCE CURVES 600VAPT50GT60BR_SR(G) APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B) Thunderbolt IGBT® D3PAK (S) C The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch G E Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast G switching s

5.164. apt50gp60sg.pdf Size:96K _igbt_a

APT50GP60B APT50GP60S 600V ® POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E G E switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 26

Datasheet: APT5024BVFR , APT5024BVR , APT5025BN , APT5026HVR , APT5028BVR , APT5028SVR , APT5030AVR , APT5032CVR , IRFP250N , APT50M50JVFR , APT50M50JVR , APT50M50PVR , APT50M60JN , APT50M85JVFR , APT50M85JVR , APT6013JVR , APT6015B2VR .

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MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |