APT5040CNR - описание и поиск аналогов

 ..1. Size:52K  apt
 apt5040cnr.pdf 

D TO-254 G S APT5040CNR 500V 13.0A 0.400 TM POWER MOS IV Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Faster Switching 100% Avalanche Tested Popular TO-254 Package Low Gate Charge Similar to the 2N7228, JX2N7228 and JV2N7228 MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT5040CNR UNIT VDSS Drai

 7.1. Size:93K  apt
 apt5040kfllg.pdf 

APT5040KFLL 500V 17A 0.400 R POWER MOS 7 FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) G and Qg. Power MOS 7 combines lower conduction and switching losses D S along with exceptionally

 9.1. Size:26K  1
 apt50gf60ar.pdf 

APT50GF60AR 600V 55A Fast IGBT TO-3 The Fast IGBT is a new generation of high voltage power IGBTs. Using (TO-204AE) Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHz C Low Tail Current Ultra Low Leakage Current Avalanche Rated

 9.2. Size:26K  1
 apt50gf120hr.pdf 

APT50GF120HR 1200V 62A Fast IGBT TO-258 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Current Ultra Low Leakage Current G G Avalanche Rated

 9.3. Size:112K  1
 apt50gf60b2rd apt50gf60lrd.pdf 

APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C Low Forward Voltage Drop

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 apt50m50jvfr.pdf 

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 apt5014bll.pdf 

APT5014BLL APT5014SLL 500V 35A 0.140W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

 9.6. Size:65K  apt
 apt5028svr.pdf 

APT5028SVR 500V 20A 0.280 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 9.7. Size:94K  apt
 apt5018bfllg apt5018sfllg.pdf 

APT5018BFLL APT5018SFLL 500V 27A 0.180 BLL R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL al

 9.8. Size:60K  apt
 apt5010jll.pdf 

APT5010JLL 500V 44A 0.100 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "

 9.9. Size:196K  apt
 apt50gp60b2df2.pdf 

TYPICAL PERFORMANCE CURVES APT50GP60B2DF2 APT50GP60B2DF2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 200 kH

 9.10. Size:47K  apt
 apt5022bn.pdf 

D TO-247 G APT5020BN 500V 28.0A 0.20 S APT5022BN 500V 27.0A 0.22 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 5020BN 5022BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25 C 28 27 Amps IDM Pulsed Drain Current 1 112 108

 9.11. Size:33K  apt
 apt50m80.pdf 

APT50M80B2VFR 500V 58A 0.080W POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

 9.12. Size:71K  apt
 apt5024bfll.pdf 

APT5024BFLL APT5024SFLL 500V 22A 0.240W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

 9.13. Size:77K  apt
 apt50m50jll.pdf 

APT50M50JLL 500V 71A 0.050 R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized" along with exceptionally

 9.14. Size:187K  apt
 apt50gn120b2.pdf 

TYPICAL PERFORMANCE CURVES APT50GN120B2 APT50GN120B2 1200V Utilizing the latest Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight T-Max parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate r

 9.15. Size:112K  apt
 apt5010jvru3.pdf 

APT5010JVRU3 500V 44A 0.100 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalan

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 apt4530an apt5025an apt5030an.pdf 

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 apt5024bll apt5024sll.pdf 

APT5024BLL APT5024SLL 500V 22A 0.240 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along

 9.18. Size:32K  apt
 apt5024svr.pdf 

APT5024SVR 500V 22A 0.240 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Leak

 9.19. Size:111K  apt
 apt5010jvru2.pdf 

APT5010JVRU2 500V 44A 0.100 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalan

 9.20. Size:104K  apt
 apt5018sll.pdf 

APT5018BLL APT5018SLL 500V 27A 0.180 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along

 9.21. Size:64K  apt
 apt5010b2vfr.pdf 

APT5010B2VFR 500V 47A 0.100 POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche

 9.22. Size:60K  apt
 apt50m60jn.pdf 

D G APT50M60JN 500V 71A 0.06O S "UL Recognized" File No. E145592 (S) ISOTOP POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT Symbol Parameter 50M60JN UNIT VDSS Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25 C 71 Amps IDM, lLM Pulse

 9.23. Size:54K  apt
 apt5012jn.pdf 

D G APT5010JN 500V 48.0A 0.10 S APT5012JN 500V 43.0A 0.12 ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 5010JN 5012JN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Cu

 9.24. Size:71K  apt
 apt5014bfll.pdf 

APT5014BFLL APT5014SFLL 500V 35A 0.140W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

 9.25. Size:59K  apt
 apt5026hvr.pdf 

APT5026HVR 500V 18.5A 0.260 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

 9.26. Size:51K  apt
 apt5025bn.pdf 

D TO-247 G APT5025BN 500V 23.0A 0.25 S APT5030BN 500V 21.0A 0.30 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 5025BN 5030BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25 C 23 21 Amps IDM Pulsed Drain Current 1 92 84 V

 9.27. Size:37K  apt
 apt50gf120b2r.pdf 

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 apt50gp60b2dq2g.pdf 

TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2(G) 600V APT50GP60B2DQ2 APT50GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

 9.29. Size:33K  apt
 apt50m80b2vfr.pdf 

APT50M80B2VFR 500V 58A 0.080W POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

 9.30. Size:60K  apt
 apt50m65jll.pdf 

APT50M65JLL 500V 60A 0.065 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

 9.31. Size:167K  apt
 apt50m60l2vrg.pdf 

 9.32. Size:79K  apt
 apt50m60l2vfr.pdf 

APT50M60L2VFR 500V 77A 0.060W POWER MOS V FREDFET TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Package Faster Switching D

 9.33. Size:60K  apt
 apt5015.pdf 

APT5015BVR 500V 32A 0.150 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 9.34. Size:36K  apt
 apt50m50pvr.pdf 

APT50M50PVR 500V 74.5A 0.050 POWER MOS V P-Pack Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low

 9.35. Size:428K  apt
 apt50gt120lrdq2g.pdf 

TYPICAL PERFORMANCE CURVES APT50GT120LRDQ2(G) 1200V APT50GT120LRDQ2 APT50GT120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT TO-264 The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage

 9.36. Size:68K  apt
 apt50m75b2ll.pdf 

APT50M75B2LL APT50M75LLL 500V 57A 0.075W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s

 9.37. Size:96K  apt
 apt50gp60sg.pdf 

APT50GP60B APT50GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E G E switchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26

 9.38. Size:94K  apt
 apt50m80b2vfrg apt50m80lvfrg.pdf 

APT50M80B2VFR APT50M80LVFR 500V 58A 0.080 POWER MOS V FREDFET TM T-Max Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 9.39. Size:61K  apt
 apt5030avr.pdf 

APT5030AVR 500V 14.7A 0.300 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 9.40. Size:467K  apt
 apt50gt60brdq2g.pdf 

TYPICAL PERFORMANCE CURVES APT50GT60BRDQ2(G) 600V APT50GT60BRDQ2 APT50GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltage Drop

 9.41. Size:64K  apt
 apt5010lvr.pdf 

APT5010LVR 500V 47A 0.100 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lower

 9.42. Size:74K  apt
 apt50m85jvr.pdf 

APT50M85JVR 500V 50A 0.085 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

 9.43. Size:34K  apt
 apt50m80jlc.pdf 

APT50M80JLC 500V 52A 0.080 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOT

 9.44. Size:605K  apt
 apt50gt120ju3.pdf 

APT50GT120JU3 ISOTOP Buck chopper VCES = 1200V IC = 50A @ Tc = 80 C Trench IGBT C Application AC and DC motor control Switched Mode Power Supplies G Features Trench + Field Stop IGBT Technology E - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche

 9.45. Size:62K  apt
 apt50m75jfll.pdf 

APT50M75JFLL 500V 52A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

 9.46. Size:210K  apt
 apt50gp60jdf2.pdf 

APT50GP60JDF2 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOPfi switchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 19A C Low

 9.47. Size:76K  apt
 apt50m85jvfr.pdf 

 9.48. Size:36K  apt
 apt50m50.pdf 

APT50M50PVR 500V 74.5A 0.050 POWER MOS V P-Pack Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low

 9.49. Size:62K  apt
 apt5020svr.pdf 

APT5020SVR 500V 26A 0.200 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Le

 9.50. Size:60K  apt
 apt5010jn.pdf 

D G APT5010JN 500V 48.0A 0.10 S APT5012JN 500V 43.0A 0.12 ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 5010JN 5012JN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Cu

 9.51. Size:61K  apt
 apt5010b2vr.pdf 

APT5010B2VR 500V 47A 0.100 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low

 9.52. Size:95K  apt
 apt50gp60s.pdf 

APT50GP60B APT50GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E G E switchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26

 9.53. Size:62K  apt
 apt50m38jfll.pdf 

APT50M38JFLL 500V 91A 0.038W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

 9.54. Size:158K  apt
 apt50m60l2vfrg.pdf 

APT50M60L2VFR 500V 77A 0.060 POWER MOS V FREDFET TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D TO-264 MAX Packa

 9.55. Size:51K  apt
 apt5020bn.pdf 

D TO-247 G APT5020BN 500V 28.0A 0.20 S APT5022BN 500V 27.0A 0.22 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 5020BN 5022BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25 C 28 27 Amps IDM Pulsed Drain Current 1 112 108

 9.56. Size:468K  apt
 apt50gf60ju3.pdf 

APT50GF60JU3 ISOTOP Buck chopper VCES = 600V IC = 50A @ Tc = 90 C NPT IGBT C Application AC and DC motor control Switched Mode Power Supplies G Features Non Punch Through (NPT) THUNDERBOLT IGBT - Low voltage drop E - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche

 9.57. Size:96K  apt
 apt5027.pdf 

http //www.chipdocs.com http //www.chipdocs.com

 9.58. Size:36K  apt
 apt5030bn.pdf 

D TO-247 G APT5025BN 500V 23.0A 0.25 S APT5030BN 500V 21.0A 0.30 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 5025BN 5030BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25 C 23 21 Amps IDM Pulsed Drain Current 1 92 84 V

 9.59. Size:468K  apt
 apt50gf60ju2.pdf 

APT50GF60JU2 ISOTOP Boost chopper VCES = 600V IC = 50A @ Tc = 90 C NPT IGBT K Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction C Brake switch Features G Non Punch Through (NPT) THUNDERBOLT IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes -

 9.60. Size:64K  apt
 apt5010b2lc.pdf 

APT5010B2LC APT5010LLC 500V 47A 0.100W B2LC TM POWER MOS VI T-MAX Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate LLC layout, delivers exceptionally fast

 9.61. Size:59K  apt
 apt5024bvr.pdf 

APT5024BVR 500V 22A 0.240 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 9.62. Size:62K  apt
 apt5028bvr.pdf 

APT5028BVR 500V 20A 0.280 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 9.63. Size:292K  apt
 apt50gn60bg.pdf 

TYPICAL PERFORMANCE CURVES APT50GN60B(G) 600V APT50GN60B APT50GN60BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

 9.64. Size:190K  apt
 apt50gn120b2g.pdf 

TYPICAL PERFORMANCE CURVES APT50GN120B2(G) 1200V APT50GN120B2 APT50GN120B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design TM T-Max results in superior VCE(on) performance. Easy paralleling results from very t

 9.65. Size:165K  apt
 apt50m60jvfr.pdf 

APT50M60JVFR 500V 63A 0.060 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP Popula

 9.66. Size:61K  apt
 apt5020bvfr.pdf 

APT5020BVFR 500V 26A 0.200 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 9.67. Size:88K  apt
 apt50gp60b.pdf 

 9.68. Size:61K  apt
 apt5012wvr.pdf 

APT5012WVR 500V 40A 0.120 POWER MOS V TO-267 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 9.69. Size:63K  apt
 apt5017svr.pdf 

APT5017SVR 500V 30A 0.170 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower L

 9.70. Size:99K  apt
 apt50m65lfll.pdf 

APT50M65B2FLL APT50M65LFLL 500V 67A 0.065 R B2FLL POWER MOS 7 FREDFET T-MaxTM Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses L

 9.71. Size:39K  apt
 apt50m85b2vfr.pdf 

APT50M85B2VFR APT50M85LVFR 500V 56A 0.085W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical

 9.72. Size:58K  apt
 apt5022avr.pdf 

APT5022AVR 500V 21A 0.220 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower L

 9.73. Size:64K  apt
 apt5020svfr.pdf 

APT5020SVFR 500V 26A 0.200 POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 9.74. Size:164K  apt
 apt50m75b2llg apt50m75lllg.pdf 

APT50M75B2LL APT50M75LLL 500V 57A 0.075 R B2LL POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses alo

 9.75. Size:61K  apt
 apt5032cvr.pdf 

 9.76. Size:63K  apt
 apt5014lvr.pdf 

APT5014LVR 500V 37A 0.140 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 9.77. Size:113K  apt
 apt5024svfrg.pdf 

APT5024BVFR APT5024SVFR 500V 22A 0.240 BVFR FREDFET POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVFR also achieves faster switching speeds through optimized gate layout.

 9.78. Size:165K  apt
 apt50m75b2fllg apt50m75lfllg.pdf 

APT50M75B2FLL APT50M75LFLL 500V 57A 0.075 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses

 9.79. Size:34K  apt
 apt5017blc.pdf 

APT5017BLC APT5017SLC 500V 30A 0.170W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast switc

 9.80. Size:34K  apt
 apt5020blc.pdf 

APT5020BLC APT5020SLC 500V 26A 0.200W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast switc

 9.81. Size:605K  apt
 apt50gt120ju2.pdf 

APT50GT120JU2 ISOTOP Boost chopper VCES = 1200V IC = 50A @ Tc = 80 C Trench IGBT K Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction C Brake switch Features G Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes -

 9.82. Size:34K  apt
 apt5010jlc.pdf 

APT5010JLC 500V 44A 0.100 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOTO

 9.83. Size:55K  apt
 apt5014b2vrg.pdf 

APT5014B2VR 500V 37A 0.140 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lo

 9.84. Size:450K  apt
 apt50gp60jdq2.pdf 

TYPICAL PERFORMANCE CURVES APT50GP60JDQ2 600V APT50GP60JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Low

 9.85. Size:60K  apt
 apt50m38jll.pdf 

APT50M38JLL 500V 91A 0.038 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

 9.86. Size:62K  apt
 apt5014b2vr.pdf 

APT5014B2VR 500V 37A 0.140 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lo

 9.87. Size:63K  apt
 apt5010b2fll.pdf 

APT5010B2FLL APT5010LFLL 500V 46A 0.100W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

 9.88. Size:226K  apt
 apt50gn120l2dq2g.pdf 

TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2(G) 1200V APT50GN120L2DQ2 APT50GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264 Max results in superior VCE(on) performance. Easy paralleling result

 9.89. Size:80K  apt
 apt50gf60br.pdf 

APT50GF60BR APT50GF60BR 600V 75A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. C Low Forward Voltage Drop High Freq. Switching to 20KHz G C G Low Tail Current Ultra Low Leakage Current E Avalan

 9.90. Size:71K  apt
 apt5010jvr.pdf 

APT5010JVR 500V 44A 0.100 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T

 9.91. Size:33K  apt
 apt50m60l2vr.pdf 

 9.92. Size:60K  apt
 apt5019hvr.pdf 

APT5019HVR 500V 24A 0.190 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 9.93. Size:117K  apt
 apt5010b2lc-47434900.pdf 

APT5010B2LC 500V 47A 0.100 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage T-MAX N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and C . rss Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. D L

 9.94. Size:60K  apt
 apt5015bvr.pdf 

APT5015BVR 500V 32A 0.150 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 9.95. Size:59K  apt
 apt5020bvr.pdf 

APT5020BVR 500V 26A 0.200 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 9.96. Size:98K  apt
 apt50m65b2llg apt50m65lllg.pdf 

APT50M65B2LL APT50M65LLL 500V 67A 0.065 R B2LL POWER MOS 7 MOSFET T-MaxTM Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL

 9.97. Size:115K  apt
 apt5015bvfrg.pdf 

APT5015BVFR APT5015SVFR 500V 32A 0.150 BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVFR also achieves faster switching speeds through optimized gate layout.

 9.98. Size:201K  apt
 apt5016bfllg apt5016sfllg.pdf 

APT5016BFLL APT5016SFLL 500V 30A 0.160 R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with e

 9.99. Size:162K  apt
 apt5024bllg.pdf 

APT5024BLL APT5024SLL 500V 22A 0.240 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along

 9.100. Size:61K  apt
 apt5014.pdf 

APT5014BLL APT5014SLL 500V 35A 0.140W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

 9.101. Size:61K  apt
 apt5012.pdf 

APT5012WVR 500V 40A 0.120 POWER MOS V TO-267 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 9.102. Size:443K  apt
 apt50gf120jrdq3.pdf 

TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 1200V APT50GF120JRDQ3 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP file # E145592 Low Forwa

 9.103. Size:114K  apt
 apt5014b2vfrg apt5014lvfrg.pdf 

APT5014B2VFR APT5014LVFR 500V 37A 0.140 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 9.104. Size:63K  apt
 apt50m65.pdf 

APT50M65B2FLL APT50M65LFLL 500V 67A 0.065W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio

 9.105. Size:66K  apt
 apt5010lvfr.pdf 

APT5010LVFR 500V 47A 0.100 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 9.106. Size:170K  apt
 apt5010b2llg apt5010lllg.pdf 

APT5010B2LL APT5010LLL 500V 46A 0.100 B2LL R POWER MOS 7 MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL

 9.107. Size:63K  apt
 apt5016bfll.pdf 

APT5016BFLL APT5016SFLL 500V 30A 0.160W TM BLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

 9.108. Size:164K  apt
 apt5014bfllg apt5014sfllg.pdf 

APT5014BFLL APT5014SFLL 500V 35A 0.140 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with ex

 9.109. Size:60K  apt
 apt5017bvr.pdf 

APT5017BVR 500V 30A 0.170 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 9.110. Size:95K  apt
 apt50m50l2llg.pdf 

APT50M50L2LL 500V 89A 0.050 R POWER MOS 7 MOSFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fa

 9.111. Size:60K  apt
 apt50m75jll.pdf 

APT50M75JLL 500V 52A 0.075 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

 9.112. Size:40K  apt
 apt50m85lvr.pdf 

APT50M85B2VR APT50M85LVR 500V 56A 0.085W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificatio

 9.113. Size:36K  apt
 apt50m80b2vr.pdf 

APT50M80B2VR APT50M80LVR 500V 58A 0.080W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificatio

 9.114. Size:63K  apt
 apt5018bfll.pdf 

APT5018BFLL APT5018SFLL 500V 27A 0.180W TM BLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

 9.115. Size:147K  apt
 apt50m60jvr.pdf 

APT50M60JVR 500V 63A 0.060 POWER MOS V MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP Popular

 9.116. Size:36K  apt
 apt50m85b2vr.pdf 

APT50M85B2VR APT50M85LVR 500V 56A 0.085W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificatio

 9.117. Size:33K  apt
 apt5014b2lc.pdf 

APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC TM POWER MOS VI T-MAX Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, LLC delivers exceptionally fast

 9.118. Size:171K  apt
 apt5010b2fllg apt5010lfllg.pdf 

APT5010B2FLL APT5010LFLL 500V 46A 0.100 R B2FLL POWER MOS 7 FREDFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses a

 9.119. Size:34K  apt
 apt50m80b2lc.pdf 

APT50M80B2LC APT50M80LLC 500V 58A 0.080W B2LC TM POWER MOS VI T-MAX Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, LLC delivers exceptionally fas

 9.120. Size:106K  apt
 apt5016bllg.pdf 

APT5016BLL APT5016SLL 500V 30A 0.160 R POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with excep

 9.121. Size:68K  apt
 apt5010b2ll.pdf 

APT5010B2LL APT5010LLL 500V 46A 0.100W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

 9.122. Size:137K  apt
 apt50m85b2vfrg apt50m85lvfrg.pdf 

APT50M85B2VFR APT50M85LVFR 500V 56A 0.085 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout

 9.123. Size:173K  apt
 apt5014bllg apt5014sllg.pdf 

APT5014BLL APT5014SLL 500V 35A 0.140 R POWER MOS 7 MOSFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exce

 9.124. Size:63K  apt
 apt5010b2.pdf 

APT5010B2FLL APT5010LFLL 500V 46A 0.100W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

 9.125. Size:63K  apt
 apt50m65b2fll.pdf 

APT50M65B2FLL APT50M65LFLL 500V 67A 0.065W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio

 9.126. Size:52K  apt
 apt50gf120jrd.pdf 

APT50GF120JRD 1200V 75A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHz C L

 9.127. Size:71K  apt
 apt50m50jfll.pdf 

APT50M50JFLL 500V 71A 0.050W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

 9.128. Size:95K  apt
 apt50m50l2fllg.pdf 

APT50M50L2FLL 500V 89A 0.050 R POWER MOS 7 FREDFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally

 9.129. Size:71K  apt
 apt50m50jvr.pdf 

APT50M50JVR 500V 77A 0.050 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

 9.130. Size:61K  apt
 apt5016bll.pdf 

APT5016BLL APT5016SLL 500V 30A 0.160W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

 9.131. Size:62K  apt
 apt5017bvfr.pdf 

APT5017BVFR 500V 30A 0.170 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 9.132. Size:63K  apt
 apt5017.pdf 

APT5017SVR 500V 30A 0.170 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower L

 9.133. Size:63K  apt
 apt50m50l2ll.pdf 

APT50M50L2LL 500V 87A 0.050W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent

 9.134. Size:61K  apt
 apt5018bll.pdf 

APT5018BLL APT5018SLL 500V 27A 0.180W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

 9.135. Size:25K  apt
 apt50gf60hr.pdf 

 9.136. Size:34K  apt
 apt50m50jlc.pdf 

APT50M50JLC 500V 77A 0.050 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOT

 9.137. Size:65K  apt
 apt50m50l2fll.pdf 

APT50M50L2FLL 500V 89A 0.050W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds

 9.138. Size:63K  apt
 apt50m65jfll.pdf 

APT50M65JFLL 500V 60A 0.065W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

 9.139. Size:63K  apt
 apt5010jfll.pdf 

APT5010JFLL 500V 44A 0.100W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

 9.140. Size:124K  apt
 apt50m75jllu2.pdf 

APT50M75JLLU2 APT50M75JLLU2 500V 51A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inher

 9.141. Size:61K  apt
 apt5024bvfr.pdf 

APT5024BVFR 500V 22A 0.240 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 9.142. Size:68K  apt
 apt50m65b2ll.pdf 

APT50M65B2LL APT50M65LLL 500V 67A 0.065W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s

 9.143. Size:105K  apt
 apt50gp60j.pdf 

APT50GP60J 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 19A C Low Gat

 9.144. Size:96K  apt
 apt50gp60bg.pdf 

APT50GP60B APT50GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E G E switchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26

 9.145. Size:62K  apt
 apt5017svfrg.pdf 

APT5017BVFR APT5017SVFR 500V 30A 0.170 POWER MOS V FREDFET TO-247 D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Fast

 9.146. Size:63K  apt
 apt50m75b2fll.pdf 

APT50M75B2FLL APT50M75LFLL 500V 57A 0.075W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio

 9.147. Size:73K  apt
 apt5010jvfr.pdf 

APT5010JVFR 500V 44A 0.100 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Fast Recovery Body Diode

 9.148. Size:63K  apt
 apt5016.pdf 

APT5016BFLL APT5016SFLL 500V 30A 0.160W TM BLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

 9.149. Size:28K  apt
 apt5015blc.pdf 

APT5015BLC 500V 32A 0.150 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. D Lower G

 9.150. Size:112K  apt
 apt50gf60b2rd.pdf 

APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C Low Forward Voltage Drop

 9.151. Size:92K  apt
 apt50m80b2vrg apt50m80lvrg.pdf 

APT50M80B2VR APT50M80LVR 500V 58A 0.080 POWER MOS V TM T-Max Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Identical

 9.152. Size:60K  apt
 apt5024avr.pdf 

APT5024AVR 500V 18.5A 0.240 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 9.153. Size:62K  apt
 apt5020.pdf 

APT5020SVR 500V 26A 0.200 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Le

 9.154. Size:151K  microsemi
 apt50gt60srg.pdf 

TYPICAL PERFORMANCE CURVES 600VAPT50GT60BR_SR(G) APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B) Thunderbolt IGBT D3PAK (S) C The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch G E Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast G switching s

 9.155. Size:607K  microsemi
 apt50gs60srdq2g.pdf 

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ

 9.156. Size:1104K  microsemi
 apt50gt120b2rdq2g.pdf 

APT50GT120B2RDQ2G 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features Low Forward Voltage Drop RBSOA and SCSOA Rated Low Tail Current High Frequency Switching to 50KHz

 9.157. Size:196K  microsemi
 apt50gt120b2rg.pdf 

APT50GT120B2R(G) APT50GT120LR(G) 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features Low Forward Voltage Drop RBSOA and SCSOA Rated Low Tail Current High Frequency Sw

 9.158. Size:209K  microsemi
 apt50gt120b2rdlg.pdf 

TYPICAL PERFORMANCE CURVES APT50GT120B2RDL(G) 1200V APT50GT120B2RDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT The Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT of- fers superior ruggedness and ultrafast switching speed. Typical Applicatio

 9.159. Size:151K  microsemi
 apt50gt60brg.pdf 

TYPICAL PERFORMANCE CURVES 600VAPT50GT60BR_SR(G) APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B) Thunderbolt IGBT D3PAK (S) C The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch G E Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast G switching s

 9.160. Size:526K  microsemi
 apt50gf120b2rg.pdf 

TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) FAST IGBT T-Max TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using (L) Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt

 9.161. Size:189K  microsemi
 apt50gp60ldlg.pdf 

TYPICAL PERFORMANCE CURVES APT50GP60LDL(G) APT50GP60LDL(G) 600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmo

 9.162. Size:216K  microsemi
 apt5024sfll apt5024sfllg.pdf 

APT5024BFLL APT5024SFLL 500V 22A 0.240 BFLL R POWER MOS 7 FREDFET (B) Power MOS 7 is a new generation of low loss, high voltage, N-Channel D3PAK enhancement mode power MOSFETS. Both conduction and switch- (S) ing losses are addressed with Power MOS 7 by significantly lowering C G E RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along wi

 9.163. Size:526K  microsemi
 apt50gf120lrg.pdf 

TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) FAST IGBT T-Max TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using (L) Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt

 9.164. Size:62K  microsemi
 apt50n60jccu2.pdf 

APT50N60JCCU2 VDSS = 600V ISOTOP Boost chopper RDSon = 45m max @ Tj = 25 C Super Junction ID = 50A @ Tc = 25 C MOSFET Power Module Application AC and DC motor control K Switched Mode Power Supplies Power Factor Correction Brake switch D Features G - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge S - Avalanche e

 9.165. Size:207K  microsemi
 apt50gt60brdlg.pdf 

TYPICAL PERFORMANCE CURVES APT50GT60BRDL(G) 600V APT50GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT of- fers superior ruggedness and ultrafast switching speed. Typical Applicati

 9.166. Size:607K  microsemi
 apt50gs60brdq2g.pdf 

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ

 9.167. Size:375K  inchange semiconductor
 apt5014bll.pdf 

isc N-Channel MOSFET Transistor APT5014BLL FEATURES Drain Current I =35A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.14 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.168. Size:375K  inchange semiconductor
 apt5024bfll.pdf 

isc N-Channel MOSFET Transistor APT5024BFLL FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.24 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.169. Size:255K  inchange semiconductor
 apt50m75lfll.pdf 

isc N-Channel MOSFET Transistor APT50M75LFLL FEATURES Drain Current I = 57A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.075 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 9.170. Size:375K  inchange semiconductor
 apt5014bfll.pdf 

isc N-Channel MOSFET Transistor APT5014BFLL FEATURES Drain Current I =35A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.14 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.171. Size:375K  inchange semiconductor
 apt5015bvfr.pdf 

isc N-Channel MOSFET Transistor APT5015BVFR FEATURES Drain Current I =32A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.172. Size:376K  inchange semiconductor
 apt50m80b2vfr.pdf 

isc N-Channel MOSFET Transistor APT50M80B2VFR FEATURES Drain Current I = 58A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.08 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 9.173. Size:255K  inchange semiconductor
 apt5010lfll.pdf 

isc N-Channel MOSFET Transistor APT5010LFLL FEATURES Drain Current I =46A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.174. Size:375K  inchange semiconductor
 apt50m75b2ll.pdf 

isc N-Channel MOSFET Transistor APT50M75B2LL FEATURES Drain Current I = 57A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.075 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 9.175. Size:255K  inchange semiconductor
 apt5010lvr.pdf 

isc N-Channel MOSFET Transistor APT5010LVR FEATURES Drain Current I =47A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.176. Size:375K  inchange semiconductor
 apt5024bvr.pdf 

isc N-Channel MOSFET Transistor APT5024BVR FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.24 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.177. Size:375K  inchange semiconductor
 apt5028bvr.pdf 

isc N-Channel MOSFET Transistor APT5028BVR FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.28 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.178. Size:375K  inchange semiconductor
 apt5020bvfr.pdf 

isc N-Channel MOSFET Transistor APT5020BVFR FEATURES Drain Current I =26A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.179. Size:255K  inchange semiconductor
 apt50m65lfll.pdf 

isc N-Channel MOSFET Transistor APT50M65LFLL FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 9.180. Size:375K  inchange semiconductor
 apt5024bll.pdf 

isc N-Channel MOSFET Transistor APT5024BLL FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.24 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.181. Size:375K  inchange semiconductor
 apt5010b2fll.pdf 

isc N-Channel MOSFET Transistor APT5010B2FLL FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 9.182. Size:375K  inchange semiconductor
 apt5015bvr.pdf 

isc N-Channel MOSFET Transistor APT5015BVR FEATURES Drain Current I =32A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.183. Size:375K  inchange semiconductor
 apt5020bvr.pdf 

isc N-Channel MOSFET Transistor APT5020BVR FEATURES Drain Current I =26A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.184. Size:255K  inchange semiconductor
 apt5010lvfr.pdf 

isc N-Channel MOSFET Transistor APT5010LVFR FEATURES Drain Current I =47A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.185. Size:375K  inchange semiconductor
 apt5016bfll.pdf 

isc N-Channel MOSFET Transistor APT5016BFLL FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.16 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.186. Size:255K  inchange semiconductor
 apt50m80lvfr.pdf 

isc N-Channel MOSFET Transistor APT50M80LVFR FEATURES Drain Current I = 58A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.08 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 9.187. Size:375K  inchange semiconductor
 apt5017bvr.pdf 

isc N-Channel MOSFET Transistor APT5017BVR FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.188. Size:375K  inchange semiconductor
 apt5018bfll.pdf 

isc N-Channel MOSFET Transistor APT5018BFLL FEATURES Drain Current I =27A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.18 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.189. Size:375K  inchange semiconductor
 apt5010b2ll.pdf 

isc N-Channel MOSFET Transistor APT5010B2LL FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.190. Size:376K  inchange semiconductor
 apt50m65b2fll.pdf 

isc N-Channel MOSFET Transistor APT50M65B2FLL FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 9.191. Size:375K  inchange semiconductor
 apt5016bll.pdf 

isc N-Channel MOSFET Transistor APT5016BLL FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.16 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.192. Size:375K  inchange semiconductor
 apt5017bvfr.pdf 

isc N-Channel MOSFET Transistor APT5017BVFR FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.193. Size:375K  inchange semiconductor
 apt5018bll.pdf 

isc N-Channel MOSFET Transistor APT5018BLL FEATURES Drain Current I =27A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.18 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.194. Size:375K  inchange semiconductor
 apt5024bvfr.pdf 

isc N-Channel MOSFET Transistor APT5024BVFR FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.24 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.195. Size:255K  inchange semiconductor
 apt5010lll.pdf 

isc N-Channel MOSFET Transistor APT5010LLL FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.196. Size:376K  inchange semiconductor
 apt50m65b2ll.pdf 

isc N-Channel MOSFET Transistor APT50M65B2LL FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 9.197. Size:375K  inchange semiconductor
 apt50m75b2fll.pdf 

isc N-Channel MOSFET Transistor APT50M75B2FLL FEATURES Drain Current I = 57A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.075 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general