IPB100N08S2-07 PDF and Equivalents Search

 

IPB100N08S2-07 Specs and Replacement

Type Designator: IPB100N08S2-07

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 1260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: TO263

IPB100N08S2-07 substitution

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IPB100N08S2-07 datasheet

 ..1. Size:158K  infineon
ipb100n08s2-07 ipp100n08s2-07 ipi100n08s2-07 ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07.pdf pdf_icon

IPB100N08S2-07

IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 6.8 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒

 3.1. Size:154K  infineon
ipb100n08s2l-07 ipp100n08s2l-07 ipp100n08s2l-07 ipb100n08s2l-07.pdf pdf_icon

IPB100N08S2-07

IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.5 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala... See More ⇒

 6.1. Size:159K  infineon
ipb100n06s2l-05 ipp100n06s2l-05.pdf pdf_icon

IPB100N08S2-07

IPB100N06S2L-05 IPP100N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.4 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala... See More ⇒

 6.2. Size:159K  infineon
ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf pdf_icon

IPB100N08S2-07

IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty... See More ⇒

Detailed specifications: IPA90R340C3, IPA90R500C3, IPA90R800C3, IPB100N04S2-04, IPB100N04S2L-03, IPB100N04S3-03, IPB100N06S2-05, IPB100N06S2L-05, AO3401, IPB100N08S2L-07, IPB100N10S3-05, IPB100P03P3L-04, IPB120N04S3-02, IPB120N06S4-03, IPB160N04S2-03, IPB160N04S2L-03, IPB160N04S3-H2

Keywords - IPB100N08S2-07 MOSFET specs

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