IPB100N08S2-07 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPB100N08S2-07
Маркировка: PN0807
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 144 nC
trⓘ - Время нарастания: 51 ns
Cossⓘ - Выходная емкость: 1260 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0068 Ohm
Тип корпуса: TO263
Аналог (замена) для IPB100N08S2-07
IPB100N08S2-07 Datasheet (PDF)
ipb100n08s2-07 ipp100n08s2-07 ipi100n08s2-07 ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07.pdf
IPB100N08S2-07IPP100N08S2-07, IPI100N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 6.8mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
ipb100n08s2l-07 ipp100n08s2l-07 ipp100n08s2l-07 ipb100n08s2l-07.pdf
IPB100N08S2L-07IPP100N08S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.5mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala
ipb100n06s2l-05 ipp100n06s2l-05.pdf
IPB100N06S2L-05IPP100N06S2L-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.4mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala
ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf
IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy
ipb100n04s2-04 ipp100n04s2-04 ipp100n04s2-04 ipb100n04s2-04.pdf
IPB100N04S2-04IPP100N04S2-04OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR (SMD version) 3.3mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedT
ipb100n06s3-04.pdf
IPB100N06S3-04IPI100N06S3-04, IPP100N06S3-04OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 4.1mDS(on),maxI 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avala
ipb100n04s4-h2 ipi100n04s4-h2 ipp100n04s4-h2.pdf
IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mWDS(on),maxI 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType
ipb100n04s3-03 ipi100n04s3-03 ipp100n04s3-03 ipp100n04s3 ipb100n04s3 ipi100n04s3-03 ds 1 0.pdf
IPB100N04S3-03IPI100N04S3-03, IPP100N04S3-03OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD Version) 2.5mDS(on) I 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(
ipb100n04s2l-03 ipp100n04s2l-03 ipp100n04s2l-03 ipb100n04s2l-03.pdf
IPB100N04S2L-03IPP100N04S2L-03OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel Logic Level - Enhancement modeR (SMD version) 3.0mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala
ipb100n06s2-05 ipp100n06s2-05.pdf
IPB100N06S2-05IPP100N06S2-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 4.7mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedT
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918