IPB160N04S2-03 PDF and Equivalents Search

 

IPB160N04S2-03 Specs and Replacement

Type Designator: IPB160N04S2-03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 2150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: TO263-7

IPB160N04S2-03 substitution

- MOSFET ⓘ Cross-Reference Search

 

IPB160N04S2-03 datasheet

 ..1. Size:145K  infineon
 ipb160n04s2-03.pdf pdf_icon

IPB160N04S2-03

IPB160N04S2-03 OptiMOS - T Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R 2.9 m DS(on),max Automotive AEC Q101 qualified I 160 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green package (lead free) PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code Marking IPB1... See More ⇒

 3.1. Size:152K  infineon
 ipb160n04s2l-03.pdf pdf_icon

IPB160N04S2-03

IPB160N04S2L-03 OptiMOS - T Power-Transistor Product Summary Features V 40 V DS N-channel Logic Level - Enhancement mode R 2.7 m DS(on),max Automotive AEC Q101 qualified I 160 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green package (lead free) PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code ... See More ⇒

 4.1. Size:122K  infineon
 ipb160n04s4-h1.pdf pdf_icon

IPB160N04S2-03

IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.6 mW DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S4-H1 PG-TO263-7-3 4N04H1 ... See More ⇒

 4.2. Size:162K  infineon
 ipb160n04s4-h1 ds 1 0.pdf pdf_icon

IPB160N04S2-03

IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.6 m DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S4-H1 PG-TO263-7-3 4N04H1... See More ⇒

SHOW MORE

Detailed specifications: IPB100N06S2-05, IPB100N06S2L-05, IPB100N08S2-07, IPB100N08S2L-07, IPB100N10S3-05, IPB100P03P3L-04, IPB120N04S3-02, IPB120N06S4-03, K4145, IPB160N04S2L-03, IPB160N04S3-H2, IPB180N03S4L-H0, IPB180N04S3-02, IPB180N04S4-00, IPB180N06S4-H1, IPB22N03S4L-15, IPB45N06S4-09

Keywords - IPB160N04S2-03 MOSFET specs

 IPB160N04S2-03 cross reference

 IPB160N04S2-03 equivalent finder

 IPB160N04S2-03 pdf lookup

 IPB160N04S2-03 substitution

 IPB160N04S2-03 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.