All MOSFET. IPB160N04S2L-03 Datasheet

 

IPB160N04S2L-03 Datasheet and Replacement


   Type Designator: IPB160N04S2L-03
   Marking Code: P2N04L03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 163 nC
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 2200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: TO263-7
 

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IPB160N04S2L-03 Datasheet (PDF)

 0.1. Size:152K  infineon
ipb160n04s2l-03.pdf pdf_icon

IPB160N04S2L-03

IPB160N04S2L-03OptiMOS - T Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel Logic Level - Enhancement modeR 2.7mDS(on),max Automotive AEC Q101 qualifiedI 160 AD MSL1 up to 260C peak reflow 175C operating temperature Green package (lead free)PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche testedType Package Ordering Code

 3.1. Size:145K  infineon
ipb160n04s2-03.pdf pdf_icon

IPB160N04S2L-03

IPB160N04S2-03OptiMOS - T Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR 2.9mDS(on),max Automotive AEC Q101 qualifiedI 160 AD MSL1 up to 260C peak reflow 175C operating temperature Green package (lead free)PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche testedType Package Ordering Code MarkingIPB1

 4.1. Size:122K  infineon
ipb160n04s4-h1.pdf pdf_icon

IPB160N04S2L-03

IPB160N04S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.6mWDS(on)I 160 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB160N04S4-H1 PG-TO263-7-3 4N04H1

 4.2. Size:162K  infineon
ipb160n04s4-h1 ds 1 0.pdf pdf_icon

IPB160N04S2L-03

IPB160N04S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.6mDS(on)I 160 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB160N04S4-H1 PG-TO263-7-3 4N04H1

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - IPB160N04S2L-03 MOSFET datasheet

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