All MOSFET. IPB45N06S4L-08 Datasheet

 

IPB45N06S4L-08 Datasheet and Replacement


   Type Designator: IPB45N06S4L-08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
   Package: TO263
 

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IPB45N06S4L-08 Datasheet (PDF)

 ..1. Size:170K  infineon
ipb45n06s4l-08 ipi45n06s4l-08 ipp45n06s4l-08 ipp45n06s4l ipb45n06s4l ipi45n06s4l-08.pdf pdf_icon

IPB45N06S4L-08

IPB45N06S4L-08IPI45N06S4L-08, IPP45N06S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.9mDS(on),max I 45 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 4.1. Size:159K  infineon
ipb45n06s4-09 ipi45n06s4-09 ipp45n06s4-09.pdf pdf_icon

IPB45N06S4L-08

IPB45N06S4-09IPI45N06S4-09, IPP45N06S4-09OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 9.2mDS(on),max I 45 ADFeatures N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB45N06S4-09 PG-TO263-

 5.1. Size:186K  infineon
ipb45n06s3-16.pdf pdf_icon

IPB45N06S4L-08

IPB45N06S3-16IPI45N06S3-16, IPP45N06S3-16OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 15.4mDS(on),maxI 45 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanch

 7.1. Size:159K  infineon
ipp45n04s4l-08 ipb45n04s4l-08 ipi45n04s4l-08.pdf pdf_icon

IPB45N06S4L-08

IPB45N04S4L-08IPI45N04S4L-08, IPP45N04S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 7.6mDS(on),max I 45 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp

Datasheet: IPB160N04S2L-03 , IPB160N04S3-H2 , IPB180N03S4L-H0 , IPB180N04S3-02 , IPB180N04S4-00 , IPB180N06S4-H1 , IPB22N03S4L-15 , IPB45N06S4-09 , IRLB4132 , IPB45P03P4L-11 , IPB47N10S-33 , IPB47N10SL-26 , IPB50N10S3L-16 , IPB70N04S3-07 , IPB70N10S3-12 , IPB70N10S3L-12 , IPB70N10SL-16 .

History: 5N65G-TF2-T | NX7002BK | RU1H130Q | MTN2328N3 | AP70SL380AH | IPT026N10N5 | TK16G60W5

Keywords - IPB45N06S4L-08 MOSFET datasheet

 IPB45N06S4L-08 cross reference
 IPB45N06S4L-08 equivalent finder
 IPB45N06S4L-08 lookup
 IPB45N06S4L-08 substitution
 IPB45N06S4L-08 replacement

 

 
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