IPB015N04LG Specs and Replacement

Type Designator: IPB015N04LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 3400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: TO263

IPB015N04LG substitution

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IPB015N04LG datasheet

 ..1. Size:443K  infineon
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IPB015N04LG

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IPB015N04LG

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IPB015N04LG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB015N04L FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIM... See More ⇒

 5.1. Size:670K  infineon
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IPB015N04LG

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Detailed specifications: IPB80P03P4L-04, IPB80P03P4L-07, IPB90N04S4-02, IPB90N06S4-04, IPB90N06S4L-04, IPB009N03LG, IPB011N04LG, IPB011N04NG, AO4468, IPB015N04NG, IPB016N06L3G, IPB017N06N3G, IPB019N06L3G, IPB019N08N3G, IPB020N04NG, IPB020NE7N3G, IPB021N06N3G

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