IPB034N06N3G Datasheet. Specs and Replacement

Type Designator: IPB034N06N3G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 161 nS

Cossⓘ - Output Capacitance: 1700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: TO263-7

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IPB034N06N3G datasheet

 3.1. Size:674K  infineon
 ipb034n06n3.pdf pdf_icon

IPB034N06N3G

pe IPB034N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> =?C?A 4A9E5B 1>4 43 43 ,&), R 4 m D n) m x P G35... See More ⇒

 5.1. Size:475K  infineon
 ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf pdf_icon

IPB034N06N3G

Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Product Summary OptiMOS 3 Power-Transistor V 60 V DS Features R 3.4 m DS(on),max (SMD) Ideal for high frequency switching and sync. rec. I 90 A D Optimized technology for DC/DC converters previous engineering Excellent gate charge x R product (FOM) DS(on) sample codes Very low on-resistance RDS(on) IPP04xN06... See More ⇒

 5.2. Size:258K  inchange semiconductor
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IPB034N06N3G

Isc N-Channel MOSFET Transistor IPB034N06L3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒

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Detailed specifications: IPB025N08N3G, IPB025N10N3G, IPB027N10N3G, IPB029N06N3G, IPB030N08N3G, IPB031NE7N3G, IPB034N03LG, IPB034N06L3G, 8205A, IPB035N08N3G, IPB036N12N3G, IPB037N06N3G, IPB038N12N3G, IPB039N04LG, IPB039N10N3G, IPB041N04NG, IPB042N03LG

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