IPB034N06N3G Datasheet and Replacement
Type Designator: IPB034N06N3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 161 nS
Cossⓘ - Output Capacitance: 1700 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TO263-7
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IPB034N06N3G Datasheet (PDF)
ipb034n06n3.pdf

pe IPB034N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D P 6?A BH>3 A53C96931C9?> =?C?A 4A9E5B 1>4 43 43 ,&),R 4 m D n) m xP G35
ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf

Type IPB034N06L3 G IPI037N06L3 GIPP037N06L3 GProduct SummaryOptiMOS3 Power-TransistorV 60 VDSFeaturesR 3.4mDS(on),max (SMD) Ideal for high frequency switching and sync. rec.I 90 AD Optimized technology for DC/DC convertersprevious engineering Excellent gate charge x R product (FOM)DS(on)sample codes: Very low on-resistance RDS(on)IPP04xN06
ipb034n06l3g.pdf

Isc N-Channel MOSFET Transistor IPB034N06L3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
Datasheet: IPB025N08N3G , IPB025N10N3G , IPB027N10N3G , IPB029N06N3G , IPB030N08N3G , IPB031NE7N3G , IPB034N03LG , IPB034N06L3G , IRF630 , IPB035N08N3G , IPB036N12N3G , IPB037N06N3G , IPB038N12N3G , IPB039N04LG , IPB039N10N3G , IPB041N04NG , IPB042N03LG .
History: BLS70R180-A | FHF15N65A | FQA13N50CF109 | NTP30N06 | SE1003 | NCE40P06J | APT10M19BVFRG
Keywords - IPB034N06N3G MOSFET datasheet
IPB034N06N3G cross reference
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IPB034N06N3G replacement
History: BLS70R180-A | FHF15N65A | FQA13N50CF109 | NTP30N06 | SE1003 | NCE40P06J | APT10M19BVFRG



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