IPB034N06N3G Specs and Replacement
Type Designator: IPB034N06N3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 161 nS
Cossⓘ - Output Capacitance: 1700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TO263-7
IPB034N06N3G substitution
IPB034N06N3G datasheet
ipb034n06n3.pdf
pe IPB034N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> =?C?A 4A9E5B 1>4 43 43 ,&), R 4 m D n) m x P G35... See More ⇒
ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf
Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Product Summary OptiMOS 3 Power-Transistor V 60 V DS Features R 3.4 m DS(on),max (SMD) Ideal for high frequency switching and sync. rec. I 90 A D Optimized technology for DC/DC converters previous engineering Excellent gate charge x R product (FOM) DS(on) sample codes Very low on-resistance RDS(on) IPP04xN06... See More ⇒
ipb034n06l3g.pdf
Isc N-Channel MOSFET Transistor IPB034N06L3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒
Detailed specifications: IPB025N08N3G , IPB025N10N3G , IPB027N10N3G , IPB029N06N3G , IPB030N08N3G , IPB031NE7N3G , IPB034N03LG , IPB034N06L3G , IRF3710 , IPB035N08N3G , IPB036N12N3G , IPB037N06N3G , IPB038N12N3G , IPB039N04LG , IPB039N10N3G , IPB041N04NG , IPB042N03LG .
Keywords - IPB034N06N3G MOSFET specs
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