IPB036N12N3G Datasheet and Replacement
Type Designator: IPB036N12N3G
Marking Code: 036N12N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id| ⓘ - Maximum Drain Current: 180
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Qg ⓘ - Total Gate Charge: 158
nC
tr ⓘ - Rise Time: 52
nS
Cossⓘ -
Output Capacitance: 1320
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036
Ohm
Package:
TO263-7
IPB036N12N3G substitution
-
MOSFET ⓘ Cross-Reference Search
IPB036N12N3G Datasheet (PDF)
..1. Size:633K infineon
ipb036n12n3g.pdf 
IPB036N12N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D Q #4513I CG9D389>7 1>4 3?>F5BD5BCR m D n) m xQ H35
9.1. Size:475K infineon
ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf
Type IPB034N06L3 G IPI037N06L3 GIPP037N06L3 GProduct SummaryOptiMOS3 Power-TransistorV 60 VDSFeaturesR 3.4mDS(on),max (SMD) Ideal for high frequency switching and sync. rec.I 90 AD Optimized technology for DC/DC convertersprevious engineering Excellent gate charge x R product (FOM)DS(on)sample codes: Very low on-resistance RDS(on)IPP04xN06
9.2. Size:674K infineon
ipb034n06n3.pdf
pe IPB034N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D P 6?A BH>3 A53C96931C9?> =?C?A 4A9E5B 1>4 43 43 ,&),R 4 m D n) m xP G35
9.3. Size:696K infineon
ipb030n08n3.pdf
IPB030N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?CI 1 DQ H35
9.4. Size:264K infineon
ipp039n04lg ipb039n04lg.pdf
Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on
9.5. Size:484K infineon
ipb037n06n3g ipi040n06n3g ipp040n06n3g.pdf
Type IPB037N06N3 G IPI040N06N3 GIPP040N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDSR 3.7 for sync. rectification, drives and dc/dc SMPS mDS(on),max (SMD)I 90 A Excellent gate charge x R product (FOM) DDS(on)previous engineering Very low on-resistance RDS(on)sample codes: N-channel, normal level IPP04xN06NIPI04xN06N Ava
9.6. Size:1018K infineon
ipp037n08n3ge8181 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf
IPP037N08N3 G IPI037N08N3 GIPB035N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI 1 DQ H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 +D n)#) ' ' !Q ' 381>>5?B=1
9.7. Size:1003K infineon
ipb033n10n5lf.pdf
IPB033N10N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 100 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain
9.8. Size:508K infineon
ipb038n12n3-g ipi041n12n3-g ipp041n12n3-g.pdf
IPI041N12N3 GIPP041N12N3 G IPB038N12N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 120 VDS N-channel, normal levelR 3.8mDS(on),max (TO-263) Excellent gate charge x R product (FOM)DS(on)I 120 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to
9.9. Size:534K infineon
ipb031ne7n3 ipb031ne7n3g.pdf
IPB031NE7N3 GTM 3 Power-TransistorProduct SummaryFeaturesV 7 D Q ( @D9=9J54 D538>??EC B53D96931D9?>R 1 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BCI 1 DQ H35
9.10. Size:344K infineon
ipb039n04l-g ipp039n04l-g.pdf
Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on
9.11. Size:664K infineon
ipb039n10n3ge8187.pdf
IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1
9.12. Size:279K infineon
ipb03n03lbg.pdf
IPB03N03LBOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Ideal for high-frequency dc/dc convertersR 2.8mDS(on),max Qualified according to JEDEC1) for target applicationI 80 AD N-channel - Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)PG-TO220-3-1PG-TO263-3 Superior thermal resistan
9.13. Size:615K infineon
ipb039n04l .pdf
pe %% # ! % # ! % (>.;?6?@%>EFeatures 4 D S 4EF EI
9.14. Size:1124K infineon
ipb031n08n5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPB031N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPB031N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R
9.15. Size:725K infineon
ipp034n03lg ipb034n03lg.pdf
Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
9.16. Size:686K infineon
ipb039n04l.pdf
Type IPP039N04L GIPB039N04L G 3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
9.17. Size:1096K infineon
ipb032n10n5.pdf
IPB032N10N5MOSFETD-PAK 7pinOptiMOS 5 Power-Transistor, 100 VFeatures Ideal for high frequency switching and sync. rec.tab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level1 100% avalanche tested Pb-free plating; RoHS compliant7 Qualified according to JEDEC1) for target applications H
9.18. Size:873K infineon
ipi041n12n3g ipp041n12n3g ipb038n12n3g.pdf
IPI041N12N3 GIPP041N12N3 G IPB038N12N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 120 V N-channel, normal levelRDS(on),max (TO-263) 3.8 mW Excellent gate charge x R product (FOM)DS(on)ID 120 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to JE
9.19. Size:494K infineon
ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf
IPP037N08N3 G IPI037N08N3 GIPB035N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS Ideal for high frequency switching and sync. rec.R 3.5mDS(on),max Optimized technology for DC/DC convertersI 100 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested
9.21. Size:723K infineon
ipb034n03l ipp034n03l.pdf
Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
9.22. Size:258K inchange semiconductor
ipb033n10n5lf.pdf
Isc N-Channel MOSFET Transistor IPB033N10N5LFFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
9.23. Size:258K inchange semiconductor
ipb038n12n3g.pdf
Isc N-Channel MOSFET Transistor IPB038N12N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
9.24. Size:228K inchange semiconductor
ipb035n08n3g.pdf
Isc N-Channel MOSFET Transistor IPB035N08N3GFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
9.25. Size:243K inchange semiconductor
ipb034n03l .pdf
isc N-Channel MOSFET Transistor IPB034N03LDESCRIPTIONDrain Current :I = 80A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY
9.26. Size:258K inchange semiconductor
ipb037n06n3.pdf
Isc N-Channel MOSFET Transistor IPB037N06N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
9.27. Size:258K inchange semiconductor
ipb034n06l3g.pdf
Isc N-Channel MOSFET Transistor IPB034N06L3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
9.28. Size:258K inchange semiconductor
ipb031n08n5.pdf
Isc N-Channel MOSFET Transistor IPB031N08N5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
9.29. Size:219K inchange semiconductor
ipb039n04l.pdf
isc N-Channel MOSFET Transistor IPB039N04LFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
9.30. Size:243K inchange semiconductor
ipb034n03l.pdf
isc N-Channel MOSFET Transistor IPB034N03LDESCRIPTIONDrain Current :I = 80A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY
9.31. Size:252K inchange semiconductor
ipb031ne7n3.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB031NE7N3FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXI
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History: NCES075R026T4
Keywords - IPB036N12N3G MOSFET datasheet
IPB036N12N3G cross reference
IPB036N12N3G equivalent finder
IPB036N12N3G lookup
IPB036N12N3G substitution
IPB036N12N3G replacement
