All MOSFET. IPB039N04LG Datasheet

 

IPB039N04LG Datasheet and Replacement


   Type Designator: IPB039N04LG
   Marking Code: 039N04L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 59 nC
   tr ⓘ - Rise Time: 5.4 nS
   Cossⓘ - Output Capacitance: 820 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO263
 
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IPB039N04LG Datasheet (PDF)

 ..1. Size:264K  infineon
 ipp039n04lg ipb039n04lg.pdf pdf_icon

IPB039N04LG

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 4.1. Size:344K  infineon
 ipb039n04l-g ipp039n04l-g.pdf pdf_icon

IPB039N04LG

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 4.2. Size:615K  infineon
 ipb039n04l .pdf pdf_icon

IPB039N04LG

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 4.3. Size:686K  infineon
 ipb039n04l.pdf pdf_icon

IPB039N04LG

Type IPP039N04L GIPB039N04L G 3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

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Keywords - IPB039N04LG MOSFET datasheet

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