IPB039N10N3G Specs and Replacement
Type Designator: IPB039N10N3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 1210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: TO263-7
IPB039N10N3G substitution
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IPB039N10N3G datasheet
ipb039n10n3g ipb039n10n3g3.pdf
IPB039N10N3 G 3 Power-Transistor Product Summary Features V 1 D P ' 381>>5?A=1... See More ⇒
ipb039n10n3ge8187.pdf
IPB039N10N3 G 3 Power-Transistor Product Summary Features V 1 D P ' 381>>5?A=1... See More ⇒
ipp039n04lg ipb039n04lg.pdf
Type IPP039N04L G IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on... See More ⇒
ipb039n04l-g ipp039n04l-g.pdf
Type IPP039N04L G IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on... See More ⇒
Detailed specifications: IPB034N03LG, IPB034N06L3G, IPB034N06N3G, IPB035N08N3G, IPB036N12N3G, IPB037N06N3G, IPB038N12N3G, IPB039N04LG, 8205A, IPB041N04NG, IPB042N03LG, IPB042N10N3G, IPB048N06LG, IPB049N06L3G, IPB049NE7N3G, IPB050N06NG, IPB051NE8NG
Keywords - IPB039N10N3G MOSFET specs
IPB039N10N3G cross reference
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IPB039N10N3G substitution
IPB039N10N3G replacement
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