All MOSFET. IPB039N10N3G Datasheet

 

IPB039N10N3G Datasheet and Replacement


   Type Designator: IPB039N10N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 1210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO263-7
 

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IPB039N10N3G Datasheet (PDF)

 ..1. Size:666K  infineon
 ipb039n10n3g ipb039n10n3g3.pdf pdf_icon

IPB039N10N3G

IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

 0.1. Size:664K  infineon
 ipb039n10n3ge8187.pdf pdf_icon

IPB039N10N3G

IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

 7.1. Size:264K  infineon
 ipp039n04lg ipb039n04lg.pdf pdf_icon

IPB039N10N3G

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 7.2. Size:344K  infineon
 ipb039n04l-g ipp039n04l-g.pdf pdf_icon

IPB039N10N3G

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

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Datasheet: IPB034N03LG , IPB034N06L3G , IPB034N06N3G , IPB035N08N3G , IPB036N12N3G , IPB037N06N3G , IPB038N12N3G , IPB039N04LG , 8205A , IPB041N04NG , IPB042N03LG , IPB042N10N3G , IPB048N06LG , IPB049N06L3G , IPB049NE7N3G , IPB050N06NG , IPB051NE8NG .

Keywords - IPB039N10N3G MOSFET datasheet

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 IPB039N10N3G replacement

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