All MOSFET. IPB049N06L3G Datasheet

 

IPB049N06L3G MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB049N06L3G

Marking Code: 049N06L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 115 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 37 nC

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 1100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0047 Ohm

Package: TO263

IPB049N06L3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB049N06L3G Datasheet (PDF)

0.1. ipb049n06l3g ipp052n06l3g ipp052n06l3 ipb049n06l3 ipp052n06l3 ipb052n06l3.pdf Size:683K _infineon

IPB049N06L3G
IPB049N06L3G

pe IPB049N06L3 G IPP052N06L3 G 3 Power-TransistorProduct SummaryFeaturesV D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 4 7 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CDI DR I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n)R ( 492??6= =@8:4 =6G6=R 2G2=2?496 E6DE65R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:

3.1. ipb049n06l3.pdf Size:258K _inchange_semiconductor

IPB049N06L3G
IPB049N06L3G

Isc N-Channel MOSFET Transistor IPB049N06L3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 6.1. ipb049n08n5.pdf Size:1130K _infineon

IPB049N06L3G
IPB049N06L3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 80 VIPB049N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 80 VIPB049N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R pr

6.2. ipb049n08n5.pdf Size:205K _inchange_semiconductor

IPB049N06L3G
IPB049N06L3G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB049N08N5FEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: IPB037N06N3G , IPB038N12N3G , IPB039N04LG , IPB039N10N3G , IPB041N04NG , IPB042N03LG , IPB042N10N3G , IPB048N06LG , IRF2807 , IPB049NE7N3G , IPB050N06NG , IPB051NE8NG , IPB052N04NG , IPB054N06N3G , IPB054N08N3G , IPB055N03LG , IPB05CN10NG .

 

 
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