IPB049N06L3G Datasheet and Replacement

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Isc N-Channel MOSFET Transistor IPB049N06L3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 80 VIPB049N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 80 VIPB049N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R pr

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB049N08N5FEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a