IPB054N08N3G MOSFET Datasheet: N-Ch, 80V, 80A. Full specification with pinout and replacement list

IPB054N08N3G Specs and Replacement

   Type Designator: IPB054N08N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 963 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TO263

IPB054N08N3G substitution

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IPB054N08N3G datasheet

..1. Size:1022K infineon
ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf pdf_icon

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G 3 Power-Transistor Product Summary Features V 80 V DS Q ' 381>>5?B=1... See More ⇒

..2. Size:258K inchange semiconductor
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Isc N-Channel MOSFET Transistor IPB054N08N3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒

3.1. Size:526K infineon
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IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS N-channel, normal level R 5.4 m DS(on),max (SMD) Excellent gate charge x R product (FOM) DS(on) I 80 A D Very low on-resistance R DS(on) previous engineering 175 C operating temperature sample codes IPP06CN08N Pb-free lead plating; RoHS complia... See More ⇒

6.1. Size:691K infineon
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pe IPB054N06N3 G IPP057N06N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1... See More ⇒