IPB072N15N3G Specs and Replacement
Type Designator: IPB072N15N3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 638 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TO263
IPB072N15N3G substitution
- MOSFET ⓘ Cross-Reference Search
IPB072N15N3G datasheet
ipb072n15n3g ipp075n15n3g ipi075n15n3g.pdf
IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G 3 Power-Transistor Product Summary Features V 150 V DS Q ' 381>>5?B=1... See More ⇒
ipb072n15n3g.pdf
Isc N-Channel MOSFET Transistor IPB072N15N3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒
ipb072n15n3-g ipp075n15n3-g ipi075n15n3-g.pdf
IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G OptiMOS 3 Power-Transistor Product Summary Features V 150 V DS N-channel, normal level R 7.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for tar... See More ⇒
Detailed specifications: IPB054N08N3G, IPB055N03LG, IPB05CN10NG, IPB065N03LG, IPB065N06LG, IPB065N15N3G, IPB067N08N3G, IPB06CN10NG, 13N50, IPB075N04LG, IPB080N03LG, IPB080N06NG, IPB081N06L3G, IPB083N10N3G, IPB08CNE8NG, IPB090N06N3G, IPB093N04LG
Keywords - IPB072N15N3G MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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