IPB072N15N3G Datasheet and Replacement
Type Designator: IPB072N15N3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 638 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TO263
IPB072N15N3G substitution
IPB072N15N3G Datasheet (PDF)
ipb072n15n3g ipp075n15n3g ipi075n15n3g.pdf

IPB072N15N3 G IPP075N15N3 GIPI075N15N3 G 3 Power-TransistorProduct SummaryFeaturesV 150 VDSQ ' 381>>5?B=1
ipb072n15n3g.pdf

Isc N-Channel MOSFET Transistor IPB072N15N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
ipb072n15n3-g ipp075n15n3-g ipi075n15n3-g.pdf

IPB072N15N3 G IPP075N15N3 GIPI075N15N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 150 VDS N-channel, normal levelR 7.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for tar
ipb070n06lg ipp070n06lg7.pdf

IPB070N06L G IPP070N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C
Datasheet: IPB054N08N3G , IPB055N03LG , IPB05CN10NG , IPB065N03LG , IPB065N06LG , IPB065N15N3G , IPB067N08N3G , IPB06CN10NG , TK10A60D , IPB075N04LG , IPB080N03LG , IPB080N06NG , IPB081N06L3G , IPB083N10N3G , IPB08CNE8NG , IPB090N06N3G , IPB093N04LG .
History: SPP16N50C3
Keywords - IPB072N15N3G MOSFET datasheet
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IPB072N15N3G lookup
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History: SPP16N50C3



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