Справочник MOSFET. IPB072N15N3G

 

IPB072N15N3G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPB072N15N3G
   Маркировка: 072N15N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 300 W
   Предельно допустимое напряжение сток-исток |Uds|: 150 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 100 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 70 nC
   Время нарастания (tr): 35 ns
   Выходная емкость (Cd): 638 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0072 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IPB072N15N3G

 

 

IPB072N15N3G Datasheet (PDF)

 ..1. Size:739K  infineon
ipb072n15n3g ipp075n15n3g ipi075n15n3g.pdf

IPB072N15N3G
IPB072N15N3G

IPB072N15N3 G IPP075N15N3 GIPI075N15N3 G 3 Power-TransistorProduct SummaryFeaturesV 150 VDSQ ' 381>>5?B=1

 ..2. Size:258K  inchange semiconductor
ipb072n15n3g.pdf

IPB072N15N3G
IPB072N15N3G

Isc N-Channel MOSFET Transistor IPB072N15N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 3.1. Size:424K  infineon
ipb072n15n3-g ipp075n15n3-g ipi075n15n3-g.pdf

IPB072N15N3G
IPB072N15N3G

IPB072N15N3 G IPP075N15N3 GIPI075N15N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 150 VDS N-channel, normal levelR 7.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for tar

 9.1. Size:736K  infineon
ipb070n06lg ipp070n06lg7.pdf

IPB072N15N3G
IPB072N15N3G

IPB070N06L G IPP070N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

 9.2. Size:980K  infineon
ipb073n15n5.pdf

IPB072N15N3G
IPB072N15N3G

IPB073N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeatures Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Q )rr 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synch

 9.3. Size:162K  infineon
ipp07n03l ipb07n03l.pdf

IPB072N15N3G
IPB072N15N3G

IPP07N03LIPB07N03LOptiMOS Buck converter seriesProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 5.9 m Logic LevelID 80 A Low On-Resistance RDS(on)P- TO263 -3-2 P- TO220 -3-1 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ideal for f

 9.4. Size:894K  infineon
ipb070n06ng ipp070n06ng ipi070n06ngrev1.4.pdf

IPB072N15N3G
IPB072N15N3G

IPB070N06N G IPP070N06N GIPI070N06N G Power-TransistorProduct SummaryFeaturesV D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@BR 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C >?A=1

 9.5. Size:445K  infineon
ipb075n04l.pdf

IPB072N15N3G
IPB072N15N3G

pe % # ! % (>.;?6?@%>EFeatures 4 D Q 2CD CG:D49:?8 ') - . 7@B -'*- 7 m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 G O D n)Q F2=2?496 D6CD65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DQ "2=@86?

 9.6. Size:205K  inchange semiconductor
ipb073n15n5.pdf

IPB072N15N3G
IPB072N15N3G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB073N15N5FEATURESWith TO-263(D2PAK) packagingVery low reverse recovery chargeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB065N15N3G

 

 
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