IPB144N12N3G Specs and Replacement
Type Designator: IPB144N12N3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 304 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0144 Ohm
Package: TO263
IPB144N12N3G substitution
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IPB144N12N3G datasheet
ipb144n12n3g ipi147n12n3g ipp147n12n3g ipp147n12n3 ipi147n12n3 ipb144n12n3.pdf
IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G 3 Power-Transistor Product Summary Features V 1 D R ( 492??6= ?@C>2= =6G6= R 14 7 m - @? >2I R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D DE2?46 R D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH... See More ⇒
ipb144n12n3g.pdf
Isc N-Channel MOSFET Transistor IPB144N12N3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒
ipb140n08s4-04.pdf
IPB140N08S4-04 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R 4.2 mW DS(on),max I 140 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB140N08S4-04 PG-TO263-7-3 4N0804 Maximum ratin... See More ⇒
Detailed specifications: IPB120N04S4-01, IPB120N04S4-02, IPB120N06NG, IPB120N06S4-02, IPB120N06S4-H1, IPB123N10N3G, IPB12CNE8NG, IPB136N08N3G, SI2302, IPB147N03LG, IPB160N04S4-H1, IPB16CN10NG, IPB180N03S4L-01, IPB180N04S4-01, IPB180N04S4-H0, IPB200N15N3G, IPB200N25N3G
Keywords - IPB144N12N3G MOSFET specs
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History: SI8465DB
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