All MOSFET. APT6025BVR Datasheet

 

APT6025BVR Datasheet and Replacement


   Type Designator: APT6025BVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 185 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 525 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO247
 

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APT6025BVR Datasheet (PDF)

 ..1. Size:62K  apt
 apt6025bvr.pdf pdf_icon

APT6025BVR

APT6025BVR600V 25A 0.250POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 ..2. Size:375K  inchange semiconductor
 apt6025bvr.pdf pdf_icon

APT6025BVR

isc N-Channel MOSFET Transistor APT6025BVRFEATURESDrain Current I =25A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 0.1. Size:49K  apt
 apt6025bvrg.pdf pdf_icon

APT6025BVR

APT6025BVR600V 25A 0.250POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 5.1. Size:116K  apt
 apt6025bvfrg apt6025svfrg.pdf pdf_icon

APT6025BVR

APT6025BVFRAPT6025SVFR600V 25A 0.250POWER MOS V FREDFETD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Re

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Keywords - APT6025BVR MOSFET datasheet

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