IPB180N03S4L-01 Specs and Replacement

Type Designator: IPB180N03S4L-01

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 3370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00105 Ohm

Package: TO263-7

IPB180N03S4L-01 substitution

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IPB180N03S4L-01 datasheet

 0.1. Size:161K  infineon
ipb180n03s4l-01 ipb180n03s4l-01 ds 1 0.pdf pdf_icon

IPB180N03S4L-01

IPB180N03S4L-01 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 1.05 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N03S4L-01 PG-TO263-7-3 4N... See More ⇒

 1.1. Size:161K  infineon
ipb180n03s4l-h0 ipb180n03s4l-h0 ds 1 0.pdf pdf_icon

IPB180N03S4L-01

IPB180N03S4L-H0 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 0.95 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N03S4L-H0 PG-TO263-7-3 4N... See More ⇒

 6.1. Size:351K  infineon
ipb180n04s4-00.pdf pdf_icon

IPB180N03S4L-01

IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.98 mW ID 180 A Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maxim... See More ⇒

 6.2. Size:201K  infineon
ipb180n08s4-02.pdf pdf_icon

IPB180N03S4L-01

IPB180N08S4-02 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R 2.2 mW DS(on),max I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N08... See More ⇒

Detailed specifications: IPB120N06S4-H1, IPB123N10N3G, IPB12CNE8NG, IPB136N08N3G, IPB144N12N3G, IPB147N03LG, IPB160N04S4-H1, IPB16CN10NG, IRF520, IPB180N04S4-01, IPB180N04S4-H0, IPB200N15N3G, IPB200N25N3G, IPB230N06L3G, IPB260N06N3G, IPB26CN10NG, IPB320N20N3G

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