IPB230N06L3G Datasheet and Replacement
Type Designator: IPB230N06L3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO263
IPB230N06L3G substitution
IPB230N06L3G Datasheet (PDF)
ipp230n06l3 ipb230n06l3.pdf
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Datasheet: IPB147N03LG , IPB160N04S4-H1 , IPB16CN10NG , IPB180N03S4L-01 , IPB180N04S4-01 , IPB180N04S4-H0 , IPB200N15N3G , IPB200N25N3G , 8N60 , IPB260N06N3G , IPB26CN10NG , IPB320N20N3G , IPB34CN10NG , IPB45N04S4L-08 , IPB50CN10NG , IPB50R140CP , IPB50R199CP .
History: DH850N10E | CS8N65F-B | 24NM60G-T3F-T | CS8N60P | 12N60L-TA3-T | MTNN8453KQ8 | DH850N10
Keywords - IPB230N06L3G MOSFET datasheet
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IPB230N06L3G replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: DH850N10E | CS8N65F-B | 24NM60G-T3F-T | CS8N60P | 12N60L-TA3-T | MTNN8453KQ8 | DH850N10
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