IPB320N20N3G Datasheet and Replacement
Type Designator: IPB320N20N3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO263
IPB320N20N3G substitution
IPB320N20N3G Datasheet (PDF)
ipb320n20n3g ipp320n20n3g ipi320n20n3g ipp320n20n3g ipb320n20n3g ipi320n20n3g .pdf

IPB320N20N3 G IPP320N20N3 GIPI320N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 200 VDS N-channel, normal levelR 32mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 34 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applica
ipp320n20n3g ipb320n20n3g ipi320n20n3g.pdf

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ipb320n20n3g.pdf

Isc N-Channel MOSFET Transistor IPB320N20N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
Datasheet: IPB180N03S4L-01 , IPB180N04S4-01 , IPB180N04S4-H0 , IPB200N15N3G , IPB200N25N3G , IPB230N06L3G , IPB260N06N3G , IPB26CN10NG , RU6888R , IPB34CN10NG , IPB45N04S4L-08 , IPB50CN10NG , IPB50R140CP , IPB50R199CP , IPB50R250CP , IPB50R299CP , IPB530N15N3G .
History: TSM7N65CZ | FQA6N90CF109 | SRM12N65TC
Keywords - IPB320N20N3G MOSFET datasheet
IPB320N20N3G cross reference
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IPB320N20N3G replacement
History: TSM7N65CZ | FQA6N90CF109 | SRM12N65TC



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