IPB320N20N3G Specs and Replacement
Type Designator: IPB320N20N3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO263
IPB320N20N3G substitution
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IPB320N20N3G datasheet
ipb320n20n3g ipp320n20n3g ipi320n20n3g ipp320n20n3g ipb320n20n3g ipi320n20n3g .pdf
IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 200 V DS N-channel, normal level R 32 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 34 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applica... See More ⇒
ipp320n20n3g ipb320n20n3g ipi320n20n3g.pdf
$ " " $$ " " $ " " TM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 200 V DS Q ' 381>>5?B=1... See More ⇒
ipb320n20n3g.pdf
Isc N-Channel MOSFET Transistor IPB320N20N3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒
Detailed specifications: IPB180N03S4L-01 , IPB180N04S4-01 , IPB180N04S4-H0 , IPB200N15N3G , IPB200N25N3G , IPB230N06L3G , IPB260N06N3G , IPB26CN10NG , AO3400A , IPB34CN10NG , IPB45N04S4L-08 , IPB50CN10NG , IPB50R140CP , IPB50R199CP , IPB50R250CP , IPB50R299CP , IPB530N15N3G .
Keywords - IPB320N20N3G MOSFET specs
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