IPB34CN10NG Specs and Replacement

Type Designator: IPB34CN10NG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 58 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: TO263

IPB34CN10NG substitution

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IPB34CN10NG datasheet

 ..1. Size:854K  infineon
 ipb34cn10ng ipd33cn10ng ipi35cn10ng ipp35cn10ng ipb34cn10n ipd33cn10n ipi35cn10n ipp35cn10n.pdf pdf_icon

IPB34CN10NG

IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 33 mW Excellent gate charge x R product (FOM) DS(on) ID 27 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) f... See More ⇒

 4.1. Size:258K  inchange semiconductor
 ipb34cn10n.pdf pdf_icon

IPB34CN10NG

Isc N-Channel MOSFET Transistor IPB34CN10N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

Detailed specifications: IPB180N04S4-01, IPB180N04S4-H0, IPB200N15N3G, IPB200N25N3G, IPB230N06L3G, IPB260N06N3G, IPB26CN10NG, IPB320N20N3G, IRFB31N20D, IPB45N04S4L-08, IPB50CN10NG, IPB50R140CP, IPB50R199CP, IPB50R250CP, IPB50R299CP, IPB530N15N3G, IPB600N25N3G

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.