IPB45N04S4L-08 Datasheet and Replacement
Type Designator: IPB45N04S4L-08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
Package: TO263
IPB45N04S4L-08 substitution
IPB45N04S4L-08 Datasheet (PDF)
ipp45n04s4l-08 ipb45n04s4l-08 ipi45n04s4l-08.pdf

IPB45N04S4L-08IPI45N04S4L-08, IPP45N04S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 7.6mDS(on),max I 45 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp
ipb45n06s3-16.pdf

IPB45N06S3-16IPI45N06S3-16, IPP45N06S3-16OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 15.4mDS(on),maxI 45 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanch
ipb45n06s4-09 ipi45n06s4-09 ipp45n06s4-09.pdf

IPB45N06S4-09IPI45N06S4-09, IPP45N06S4-09OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 9.2mDS(on),max I 45 ADFeatures N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB45N06S4-09 PG-TO263-
ipb45n06s4l-08 ipi45n06s4l-08 ipp45n06s4l-08 ipp45n06s4l ipb45n06s4l ipi45n06s4l-08.pdf

IPB45N06S4L-08IPI45N06S4L-08, IPP45N06S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.9mDS(on),max I 45 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
Datasheet: IPB180N04S4-H0 , IPB200N15N3G , IPB200N25N3G , IPB230N06L3G , IPB260N06N3G , IPB26CN10NG , IPB320N20N3G , IPB34CN10NG , IRFZ48N , IPB50CN10NG , IPB50R140CP , IPB50R199CP , IPB50R250CP , IPB50R299CP , IPB530N15N3G , IPB600N25N3G , IPB60R099C6 .
History: 2SK1008-01 | WMN30N80M3 | BUZ83 | SFF240J | H04N60F | NCE60NF055F
Keywords - IPB45N04S4L-08 MOSFET datasheet
IPB45N04S4L-08 cross reference
IPB45N04S4L-08 equivalent finder
IPB45N04S4L-08 lookup
IPB45N04S4L-08 substitution
IPB45N04S4L-08 replacement
History: 2SK1008-01 | WMN30N80M3 | BUZ83 | SFF240J | H04N60F | NCE60NF055F



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