IPB50R199CP MOSFET Datasheet: N-Ch, 500V, 17A. Full specification with pinout and replacement list

IPB50R199CP Specs and Replacement

Type Designator: IPB50R199CP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm

Package: TO263

IPB50R199CP substitution

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IPB50R199CP datasheet

..1. Size:554K infineon
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IPB50R199CP C IMOSTM # A0... See More ⇒

..2. Size:228K inchange semiconductor
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Isc N-Channel MOSFET Transistor IPB50R199CP FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

7.1. Size:555K infineon
ipb50r140cp.pdf pdf_icon

IPB50R140CP C IMOSTM # A0... See More ⇒

7.2. Size:228K inchange semiconductor
ipb50r140cp.pdf pdf_icon

Isc N-Channel MOSFET Transistor IPB50R140CP FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒