IPB60R199CPA Datasheet and Replacement
Type Designator: IPB60R199CPA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 72 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
Package: TO263
IPB60R199CPA substitution
IPB60R199CPA Datasheet (PDF)
ipb60r199cpa.pdf
IPB60R199CPACoolMOS Power TransistorProduct SummaryV 600 VDSR 0.199DS(on),maxQ 33 nCg,typFeatures Lowest figure-of-merit Ron x Qg Ultra low gate charge Extreme dv/dt rated PG-TO263-3 High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for Auto
ipb60r199cp.pdf
IPB60R199CPCoolMOS Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RONxQgR 0.199DS(on),max Ultra low gate chargeQ 32 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO263 Pb-free lead plating; RoHS compliantCoolMOS CP is specially designe
ipb60r199cp.pdf
Isc N-Channel MOSFET Transistor IPB60R199CPFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
Datasheet: IPB60R099CP , IPB60R099CPA , IPB60R125C6 , IPB60R125CP , IPB60R160C6 , IPB60R165CP , IPB60R190C6 , IPB60R199CP , IRFP064N , IPB60R250CP , IPB60R280C6 , IPB60R299CP , IPB60R299CPA , IPB60R380C6 , IPB60R385CP , IPB60R520CP , IPB60R600C6 .
Keywords - IPB60R199CPA MOSFET datasheet
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