IPB60R385CP Datasheet and Replacement
Type Designator: IPB60R385CP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 38 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
Package: TO263
IPB60R385CP substitution
IPB60R385CP Datasheet (PDF)
ipb60r385cp.pdf

Isc N-Channel MOSFET Transistor IPB60R385CPFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according
Datasheet: IPB60R190C6 , IPB60R199CP , IPB60R199CPA , IPB60R250CP , IPB60R280C6 , IPB60R299CP , IPB60R299CPA , IPB60R380C6 , IRF840 , IPB60R520CP , IPB60R600C6 , IPB60R600CP , IPB60R950C6 , IPB65R280C6 , IPB65R280E6 , IPB65R380C6 , IPB65R600C6 .
History: 2SK1300 | IXTA10P15T | 2SK2574 | SRT15N050HS2 | AOTF12N65 | 2N7640-GA | AFP2341
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History: 2SK1300 | IXTA10P15T | 2SK2574 | SRT15N050HS2 | AOTF12N65 | 2N7640-GA | AFP2341



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