All MOSFET. IPD26N06S2L-35 Datasheet

 

IPD26N06S2L-35 Datasheet and Replacement


   Type Designator: IPD26N06S2L-35
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO252
 

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IPD26N06S2L-35 Datasheet (PDF)

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IPD26N06S2L-35

IPD26N06S2L-35OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 35mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Markin

Datasheet: IPB80N04S4-03 , IPD100N04S4-02 , IPD100N06S4-03 , IPD14N06S2-80 , IPD15N06S2L-64 , IPD22N08S2L-50 , IPD25N06S2-40 , IPD25N06S4L-30 , 2SK3878 , IPD30N03S2L-07 , IPD30N03S2L-10 , IPD30N03S2L-20 , IPD30N03S4L-09 , IPD30N03S4L-14 , IPD30N06S2-15 , IPD30N06S2-23 , IPD30N06S2L-13 .

History: IPD25N06S4L-30

Keywords - IPD26N06S2L-35 MOSFET datasheet

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