IPD26N06S2L-35 Specs and Replacement

Type Designator: IPD26N06S2L-35

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 178 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO252

IPD26N06S2L-35 substitution

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IPD26N06S2L-35 datasheet

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 ipd26n06s2l-35.pdf pdf_icon

IPD26N06S2L-35

IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 35 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Markin... See More ⇒

Detailed specifications: IPB80N04S4-03, IPD100N04S4-02, IPD100N06S4-03, IPD14N06S2-80, IPD15N06S2L-64, IPD22N08S2L-50, IPD25N06S2-40, IPD25N06S4L-30, P55NF06, IPD30N03S2L-07, IPD30N03S2L-10, IPD30N03S2L-20, IPD30N03S4L-09, IPD30N03S4L-14, IPD30N06S2-15, IPD30N06S2-23, IPD30N06S2L-13

Keywords - IPD26N06S2L-35 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.