IPD40N03S4L-08 Specs and Replacement

Type Designator: IPD40N03S4L-08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm

Package: TO252

IPD40N03S4L-08 substitution

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IPD40N03S4L-08 datasheet

 ..1. Size:239K  infineon
ipd40n03s4l-08 ipd40n03s4l-08 ds 1 1.pdf pdf_icon

IPD40N03S4L-08

IPD40N03S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 8.3 mW DS(on),max I 40 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD40N03S4L-08 PG-TO252-3-11 4N03L08 M... See More ⇒

 9.1. Size:992K  infineon
ipd400n06ng.pdf pdf_icon

IPD40N03S4L-08

$ " " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= 4 mW D n) m x O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2> 0B R C=;4AA >B74@E8A4 A?... See More ⇒

 9.2. Size:885K  infineon
ipd40dp06nm.pdf pdf_icon

IPD40N03S4L-08

IPD40DP06NM MOSFET D-PAK OptiMOSTM Power Transistor, -60 V Features tab P-Channel Very low on-resistance R DS(on) 100% avalanche tested Normal Level Enhancement mode 1 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Drain tab Table 1 Ke... See More ⇒

 9.3. Size:241K  inchange semiconductor
ipd400n06n.pdf pdf_icon

IPD40N03S4L-08

isc N-Channel MOSFET Transistor IPD400N06N,IIPD400N06N FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V DSS V Ga... See More ⇒

Detailed specifications: IPD30N06S2-23, IPD30N06S2L-13, IPD30N06S2L-23, IPD30N06S4L-23, IPD30N08S2-22, IPD30N08S2L-21, IPD30N10S3L-34, IPD35N10S3L-26, IRFP260, IPD50N03S2-07, IPD50N03S2L-06, IPD50N03S4L-06, IPD50N04S3-08, IPD50N04S3-09, IPD50N06S2-14, IPD50N06S2L-13, IPF105N03LG

Keywords - IPD40N03S4L-08 MOSFET specs

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