IPD40N03S4L-08 Datasheet and Replacement
Type Designator: IPD40N03S4L-08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
Package: TO252
IPD40N03S4L-08 substitution
IPD40N03S4L-08 Datasheet (PDF)
ipd40n03s4l-08 ipd40n03s4l-08 ds 1 1.pdf

IPD40N03S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 8.3mWDS(on),maxI 40 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD40N03S4L-08 PG-TO252-3-11 4N03L08M
ipd400n06ng.pdf

$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeaturesD O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= 4 mWD n) m xO ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2> 0B R C=;4AA >B74@E8A4 A?
ipd40dp06nm.pdf

IPD40DP06NMMOSFETD-PAKOptiMOSTM Power Transistor, -60 VFeaturestab P-Channel Very low on-resistance RDS(on) 100% avalanche tested Normal Level Enhancement mode1 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial ApplicationsDraintabTable 1 Ke
ipd400n06n.pdf

isc N-Channel MOSFET Transistor IPD400N06N,IIPD400N06NFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Ga
Datasheet: IPD30N06S2-23 , IPD30N06S2L-13 , IPD30N06S2L-23 , IPD30N06S4L-23 , IPD30N08S2-22 , IPD30N08S2L-21 , IPD30N10S3L-34 , IPD35N10S3L-26 , 8205A , IPD50N03S2-07 , IPD50N03S2L-06 , IPD50N03S4L-06 , IPD50N04S3-08 , IPD50N04S3-09 , IPD50N06S2-14 , IPD50N06S2L-13 , IPF105N03LG .
History: NVMTS0D6N04C
Keywords - IPD40N03S4L-08 MOSFET datasheet
IPD40N03S4L-08 cross reference
IPD40N03S4L-08 equivalent finder
IPD40N03S4L-08 lookup
IPD40N03S4L-08 substitution
IPD40N03S4L-08 replacement
History: NVMTS0D6N04C



LIST
Last Update
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2sc1815 datasheet | mj15015 | 13003 transistor datasheet | 2n3416 | bdx53c | k3563 | d882p | 2sb1560