IPD40N03S4L-08 Datasheet and Replacement
Type Designator: IPD40N03S4L-08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
Package: TO252
- MOSFET Cross-Reference Search
IPD40N03S4L-08 Datasheet (PDF)
ipd40n03s4l-08 ipd40n03s4l-08 ds 1 1.pdf

IPD40N03S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 8.3mWDS(on),maxI 40 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD40N03S4L-08 PG-TO252-3-11 4N03L08M
ipd400n06ng.pdf

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ipd40dp06nm.pdf

IPD40DP06NMMOSFETD-PAKOptiMOSTM Power Transistor, -60 VFeaturestab P-Channel Very low on-resistance RDS(on) 100% avalanche tested Normal Level Enhancement mode1 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial ApplicationsDraintabTable 1 Ke
ipd400n06n.pdf

isc N-Channel MOSFET Transistor IPD400N06N,IIPD400N06NFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Ga
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NCE60NF019T | 2SK1571
Keywords - IPD40N03S4L-08 MOSFET datasheet
IPD40N03S4L-08 cross reference
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IPD40N03S4L-08 replacement
History: NCE60NF019T | 2SK1571



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