IPD50N06S4L-08 Specs and Replacement

Type Designator: IPD50N06S4L-08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 840 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm

Package: TO252

IPD50N06S4L-08 substitution

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IPD50N06S4L-08 datasheet

 ..1. Size:162K  infineon
ipd50n06s4l-08 ipd50n06s4l-08 ds 10.pdf pdf_icon

IPD50N06S4L-08

IPD50N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 7.8 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4L-08 PG-TO252-3-11 4N06L08 Maximum ra... See More ⇒

 2.1. Size:163K  infineon
ipd50n06s4l-12 ipd50n06s4l-12 ds 10.pdf pdf_icon

IPD50N06S4L-08

IPD50N06S4L-12 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 12 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4L-12 PG-TO252-3-11 4N06L12 Maximum rat... See More ⇒

 4.1. Size:164K  infineon
ipd50n06s4-09 ipd50n06s4-09 ds 12.pdf pdf_icon

IPD50N06S4L-08

IPD50N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 9.0 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4-09 PG-TO252-3-11 4N0609 Maximum ratings, a... See More ⇒

 5.1. Size:154K  1
ipd50n06s2l-13.pdf pdf_icon

IPD50N06S4L-08

IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 12.7 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Mark... See More ⇒

Detailed specifications: IPD50N03S2L-06, IPD50N03S4L-06, IPD50N04S3-08, IPD50N04S3-09, IPD50N06S2-14, IPD50N06S2L-13, IPF105N03LG, IPD50N06S4-09, IRFB3607, IPD50N06S4L-12, IPD50N10S3L-16, IPD50P03P4L-11, IPD70N03S4L-04, IPD70N04S3-07, IPD70N10S3-12, IPD70N10S3L-12, IPD80N04S3-06

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.