IPD90N03S4L-02 Datasheet and Replacement
Type Designator: IPD90N03S4L-02
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 136
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Id| ⓘ - Maximum Drain Current: 90
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 1900
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022
Ohm
Package:
TO252
IPD90N03S4L-02 substitution
-
MOSFET ⓘ Cross-Reference Search
IPD90N03S4L-02 Datasheet (PDF)
..1. Size:160K infineon
ipd90n03s4l-02 ipd90n03s4l-02 ds 3 0.pdf 
IPD90N03S4L-02OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 2.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD90N03S4L-02
1.1. Size:157K infineon
ipd90n03s4l-03 ipd90n03s4l-03 ds.pdf
IPD90N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 3.3mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N03S4L-03 PG-TO252-3-11 4N03L03
7.1. Size:163K infineon
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf
IPD90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N06S4-04 PG-TO252-3-11 4N0604Maximum ratings, a
7.2. Size:163K infineon
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf
IPD90N06S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.5mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-03 P
7.3. Size:184K infineon
ipd90n04s3-04 ds 1 0.pdf
IPD90N04S3-04OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 3.6mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S3-04 PG-TO252-3-11 QN0404Max
7.4. Size:152K infineon
ipd90n04s4-03 ipd90n04s4-03 ds 1 0.pdf
IPD90N04S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-03 PG-TO252-3-313 4N0403Maximum ratings,
7.5. Size:154K infineon
ipd90n04s4-04 ipd90n04s4-04 ds 1 0.pdf
IPD90N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 4.1mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-04 PG-TO252-3-313 4N0404Maximum ratings,
7.6. Size:163K infineon
ipd90n06s4-07 ipd90n06s4-07 ds 10.pdf
IPD90N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 6.9mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSonType Package MarkingIPD90N04S6-07 PG-TO252-3-11
7.7. Size:163K infineon
ipd90n06s4-05 ipd90n06s4-05 ds 10.pdf
IPD90N06S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 5.1mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSonType Package MarkingIPD90N04S6-05 PG-TO252-3-11
7.8. Size:162K infineon
ipd90n04s3-h4.pdf
IPD90N04S3-H4OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 4.3mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S3-H4 PG-TO252-3-11 QN04H4Max
7.9. Size:249K infineon
ipd90n08s4-05.pdf
IPD90N08S4-05OptiMOS-T2 Power-TransistorProduct SummaryVDS 80 VRDS(on),max 5.3mWID 90 AFeaturesPG-TO252-3-313 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N08S4-05 PG-TO252-3-313 4N0805Maximum ratings, a
7.10. Size:163K infineon
ipd90n06s4l-05 ipd90n06s4l-05 ds 10.pdf
IPD90N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 4.6mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-05 PG-TO252-3-1
7.11. Size:154K infineon
ipd90n04s4l-04 ipd90n04s4l-04 ds 1 0.pdf
IPD90N04S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4L-04 PG-TO252-3-313 4N04L04Maximum ratin
7.12. Size:152K infineon
ipd90n04s4-02 ipd90n04s4-02 ds 1 0.pdf
IPD90N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 2.4mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-02 PG-TO252-3-313 4N0402Maximum ratings,
7.13. Size:163K infineon
ipd90n06s4l-06 ipd90n06s4l-06 ds 10.pdf
IPD90N06S4L-06OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 6.3mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-06 P
7.14. Size:154K infineon
ipd90n04s4-05 ipd90n04s4-05 ds 1 0.pdf
IPD90N04S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 5.2mDS(on),maxI 86 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-05 PG-TO252-3-313 4N0405Maximum ratings,
Datasheet: IPD50N10S3L-16
, IPD50P03P4L-11
, IPD70N03S4L-04
, IPD70N04S3-07
, IPD70N10S3-12
, IPD70N10S3L-12
, IPD80N04S3-06
, IPD80P03P4L-07
, 18N50
, IPD90N03S4L-03
, IPD90N04S3-04
, IPD90N04S3-H4
, IPD90N04S4-04
, IPD90N04S4L-04
, IPD90N06S4-04
, IPD90N06S4-05
, IPD90N06S4-07
.
History: AP4543GEH-HF
| NCE60N1K0I
Keywords - IPD90N03S4L-02 MOSFET datasheet
IPD90N03S4L-02 cross reference
IPD90N03S4L-02 equivalent finder
IPD90N03S4L-02 lookup
IPD90N03S4L-02 substitution
IPD90N03S4L-02 replacement
