IPD050N03LG Datasheet and Replacement
Type Designator: IPD050N03LG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 920 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO252
IPD050N03LG substitution
IPD050N03LG Datasheet (PDF)
ipd050n03lg ipf050n03lg ips050n03lg ipu050n03lg ipd050n03l ips050n03l.pdf

Type IPD050N03L G IPF050N03L GIPS050N03L G IPU050N03L GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 50 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on
ipd050n03lg.pdf

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ipd050n03lg2.pdf

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ipd050n03l ipf050n03l ips050n03l ipu050n03l.pdf

Type IPD050N03L G IPF050N03L GIPS050N03L G IPU050N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low
Datasheet: IPD034N06N3G , IPD035N06L3G , IPD036N04LG , IPD038N04NG , IPD038N06N3G , IPD040N03LG , IPD042P03L3G , IPD048N06L3G , MMIS60R580P , IPD053N06N3G , IPD053N08N3G , IPD060N03LG , IPD068N10N3G , IPD068P03L3G , IPD075N03LG , IPD079N06L3G , IPD082N10N3G .
History: SFF450M | CS4N60P | IPD053N06N3G
Keywords - IPD050N03LG MOSFET datasheet
IPD050N03LG cross reference
IPD050N03LG equivalent finder
IPD050N03LG lookup
IPD050N03LG substitution
IPD050N03LG replacement
History: SFF450M | CS4N60P | IPD053N06N3G



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