IPD050N03LG
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD050N03LG
Marking Code: 050N03L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 68
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 920
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005
Ohm
Package:
TO252
IPD050N03LG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD050N03LG
Datasheet (PDF)
..1. Size:1000K infineon
ipd050n03lg ipf050n03lg ips050n03lg ipu050n03lg ipd050n03l ips050n03l.pdf 
Type IPD050N03L G IPF050N03L GIPS050N03L G IPU050N03L GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 50 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on
..2. Size:1220K infineon
ipd050n03lg.pdf
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0.1. Size:1221K infineon
ipd050n03lg2.pdf
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4.1. Size:630K infineon
ipd050n03l ipf050n03l ips050n03l ipu050n03l.pdf
Type IPD050N03L G IPF050N03L GIPS050N03L G IPU050N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low
4.2. Size:241K inchange semiconductor
ipd050n03l.pdf
isc N-Channel MOSFET Transistor IPD050N03L, IIPD050N03LFEATURESStatic drain-source on-resistance:RDS(on)5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Ga
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