IPD079N06L3G PDF and Equivalents Search

 ..1. Size:448K  infineon
 ipd079n06l3 ipd079n06l3g.pdf

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 ..2. Size:854K  cn vbsemi
 ipd079n06l3g.pdf

IPD079N06L3G www.VBsemi.tw N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0063 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0120 ID (A) 97 Configuration Single D TO-252 G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 ... See More ⇒

 3.1. Size:243K  inchange semiconductor
 ipd079n06l3.pdf

isc N-Channel MOSFET Transistor IPD079N06L3 IIPD079N06L3 FEATURES Static drain-source on-resistance RDS(on) 7.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage ... See More ⇒

 9.1. Size:1189K  infineon
 ipd075n03lg ipd075n03lg ipf075n03lg ips075n03lg ipu075n03lg.pdf

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 9.2. Size:1186K  infineon
 ipd075n03l ips075n03l.pdf

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 9.3. Size:1175K  infineon
 ipd075n03lg 1.pdf

pe % # ! % # ! %' # ! %) # ! % (>.;?6?@ %>E Features D R 3DE DH;E5 ;@9 ') - . 8AC -'*- 7 m D n) m x R ) BE;?;K76 E75 @A>A9J 8AC 5A@G7CE7CD D 1) R + F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@D R ( 5 3@@7> >A9;5 >7G7> R I57>>7@E 93E7 5 3C97 I BCA6F5E ) ' D n) R 07CJ >AH A@ C7D;DE3@57 D n) R G3>3@5 7 C3E76 R *4 8C77 B>3E;@9 , A"- 5A?B>;3@E Ty... See More ⇒

 9.4. Size:1175K  infineon
 ipd075n03lg .pdf

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 9.5. Size:555K  infineon
 ipd075n03l ipf075n03l ips075n03l ipu075n03l.pdf

Type IPD075N03L G IPF075N03L G IPS075N03L G IPU075N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 7.5 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very l... See More ⇒

 9.6. Size:241K  inchange semiconductor
 ipd075n03l.pdf

isc N-Channel MOSFET Transistor IPD075N03L, IIPD075N03L FEATURES Static drain-source on-resistance RDS(on) 7.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V ... See More ⇒