pe % # ! % (>.;?6?@%>EFeaturesD R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 7 m D n) m xR ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CDDR I46==6?E 82E6 492C86 I AC@5F4E ) ' D n)R ( 492??6= =@8:4 =6G6=R 2G2=2?496 E6DE65R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?DType #* ( & !Package G O Ma

IPD079N06L3Gwww.VBsemi.twN-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0063 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0120ID (A) 97Configuration SingleDTO-252GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25

isc N-Channel MOSFET Transistor IPD079N06L3IIPD079N06L3FEATURESStatic drain-source on-resistance:RDS(on)7.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

pe % # ! % # ! %' # ! %) # ! % (>.;?6?@%>EFeaturesD S !4EF EI

pe % # ! % # ! %' # ! %) # ! % (>.;?6?@%>EFeaturesD S !4EF EI

pe % # ! % # ! %' # ! %) # ! % (>.;?6?@%>EFeaturesD R 3DE DH;E5:;@9 ') - . 8AC -'*- 7 m D n) m xR ) BE;?;K76 E75:@A>A9J 8AC 5A@G7CE7CDD1)R + F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@DR ( 5:3@@7> >A9;5 >7G7>R I57>>7@E 93E7 5:3C97 I BCA6F5E ) ' D n)R 07CJ >AH A@ C7D;DE3@57 D n)R G3>3@5:7 C3E76R *4 8C77 B>3E;@9 , A"- 5A?B>;3@ETy

pe % # ! % # ! %' # ! %) # ! % (>.;?6?@%>EFeaturesD R 3DE DH;E5:;@9 ') - . 8AC -'*- 7 m D n) m xR ) BE;?;K76 E75:@A>A9J 8AC 5A@G7CE7CDD1)R + F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@DR ( 5:3@@7> >A9;5 >7G7>R I57>>7@E 93E7 5:3C97 I BCA6F5E ) ' D n)R 07CJ >AH A@ C7D;DE3@57 D n)R G3>3@5:7 C3E76R *4 8C77 B>3E;@9 , A"- 5A?B>;3@ETy

Type IPD075N03L G IPF075N03L GIPS075N03L G IPU075N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 7.5mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very l

isc N-Channel MOSFET Transistor IPD075N03L, IIPD075N03LFEATURESStatic drain-source on-resistance:RDS(on)7.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV