IPD090N03LG Datasheet and Replacement
Type Designator: IPD090N03LG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO252
IPD090N03LG substitution
IPD090N03LG Datasheet (PDF)
ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf

Type IPD090N03L G IPF090N03L GIPS090N03L G IPU090N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 9mDS(on),max Optimized technology for DC/DC convertersI 40 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low
ipd090n03lg .pdf

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ipd090n03lg6.pdf

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ipd090n03lge8177.pdf

TypeIPD090N03L G E8177 OptiMOS3 Power-TransistorProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 9 mW Optimized technology for DC/DC convertersID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Aval
Datasheet: IPD060N03LG , IPD068N10N3G , IPD068P03L3G , IPD075N03LG , IPD079N06L3G , IPD082N10N3G , IPD088N04LG , IPD088N06N3G , 2N7002 , IPD096N08N3G , IPD105N03LG , IPD105N04LG , IPD110N12N3G , IPD122N10N3G , IPD127N06LG , IPD12CN10NG , IPD135N03LG .
History: CTLM8110-M832D | HSS2306A
Keywords - IPD090N03LG MOSFET datasheet
IPD090N03LG cross reference
IPD090N03LG equivalent finder
IPD090N03LG lookup
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IPD090N03LG replacement
History: CTLM8110-M832D | HSS2306A



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