IPD090N03LG Specs and Replacement
Type Designator: IPD090N03LG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO252
IPD090N03LG substitution
- MOSFET ⓘ Cross-Reference Search
IPD090N03LG datasheet
ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf
Type IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 9 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low... See More ⇒
ipd090n03lg .pdf
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ipd090n03lg6.pdf
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ipd090n03lge8177.pdf
Type IPD090N03L G E8177 OptiMOS 3 Power-Transistor Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Aval... See More ⇒
Detailed specifications: IPD060N03LG, IPD068N10N3G, IPD068P03L3G, IPD075N03LG, IPD079N06L3G, IPD082N10N3G, IPD088N04LG, IPD088N06N3G, MMIS60R580P, IPD096N08N3G, IPD105N03LG, IPD105N04LG, IPD110N12N3G, IPD122N10N3G, IPD127N06LG, IPD12CN10NG, IPD135N03LG
Keywords - IPD090N03LG MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: BF966 | CTD03P030 | BF988 | MRF184
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