All MOSFET. IPD105N04LG Datasheet

 

IPD105N04LG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD105N04LG
   Marking Code: 105N04L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO252

 IPD105N04LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD105N04LG Datasheet (PDF)

 4.1. Size:430K  infineon
 ipd105n04l.pdf

IPD105N04LG IPD105N04LG

pe % # ! % (>.;?6?@%>EFeaturesV 4 D Q 2CD CG:D49:?8 ') - . 7@B -'*-R 1 m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCI 4 D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H R AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 RD n)Q F2=2?496 D6CD65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DType #

 6.1. Size:1239K  1
 ipd105n03lg ipf105n03lg ips105n03lg ipu105n03lg.pdf

IPD105N04LG IPD105N04LG

pe % # ! % # ! %' # ! %) # ! % (>.;?6?@%>EFeaturesD S !4EF EI

 9.1. Size:154K  infineon
 ipd100n04s4-02.pdf

IPD105N04LG IPD105N04LG

IPD100N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 2.0mDS(on),maxI 100 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD100N04S4-02 PG-TO252-3-313 4N0402Maximum ratin

 9.2. Size:232K  infineon
 ipd100n04s4l-02.pdf

IPD105N04LG IPD105N04LG

IPD100N04S4L-02OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.9mWID 100 AFeatures OptiMOSTM - power MOSFET for automotive applicationsPG-TO252-3-313 N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp

 9.3. Size:163K  infineon
 ipd100n06s4-03.pdf

IPD105N04LG IPD105N04LG

IPD100N06S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.5mDS(on),maxI 100 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Ultra High IDType Package MarkingIPD100N

 9.4. Size:291K  inchange semiconductor
 ipd100n04s4-02.pdf

IPD105N04LG IPD105N04LG

isc N-Channel MOSFET Transistor IPD100N04S4-02FEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R : 4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAX

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top