IPD105N04LG Specs and Replacement

Type Designator: IPD105N04LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO252

IPD105N04LG substitution

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IPD105N04LG datasheet

 4.1. Size:430K  infineon
 ipd105n04l.pdf pdf_icon

IPD105N04LG

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 6.1. Size:1239K  1
 ipd105n03lg ipf105n03lg ips105n03lg ipu105n03lg.pdf pdf_icon

IPD105N04LG

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 9.1. Size:154K  infineon
 ipd100n04s4-02.pdf pdf_icon

IPD105N04LG

IPD100N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 2.0 m DS(on),max I 100 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD100N04S4-02 PG-TO252-3-313 4N0402 Maximum ratin... See More ⇒

 9.2. Size:232K  infineon
 ipd100n04s4l-02.pdf pdf_icon

IPD105N04LG

IPD100N04S4L-02 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.9 mW ID 100 A Features OptiMOSTM - power MOSFET for automotive applications PG-TO252-3-313 N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ... See More ⇒

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Detailed specifications: IPD075N03LG, IPD079N06L3G, IPD082N10N3G, IPD088N04LG, IPD088N06N3G, IPD090N03LG, IPD096N08N3G, IPD105N03LG, 60N06, IPD110N12N3G, IPD122N10N3G, IPD127N06LG, IPD12CN10NG, IPD135N03LG, IPD135N08N3G, IPD144N06NG, IPD160N04LG

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.