IPD105N04LG - Даташиты. Аналоги. Основные параметры

pe % # ! % (>.;?6?@%>EFeaturesV 4 D Q 2CD CG:D49:?8 ') - . 7@B -'*-R 1 m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCI 4 D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H R AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 RD n)Q F2=2?496 D6CD65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DType #

pe % # ! % # ! %' # ! %) # ! % (>.;?6?@%>EFeaturesD S !4EF EI

IPD100N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 2.0mDS(on),maxI 100 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD100N04S4-02 PG-TO252-3-313 4N0402Maximum ratin

IPD100N04S4L-02OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.9mWID 100 AFeatures OptiMOSTM - power MOSFET for automotive applicationsPG-TO252-3-313 N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp

IPD100N06S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.5mDS(on),maxI 100 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Ultra High IDType Package MarkingIPD100N

isc N-Channel MOSFET Transistor IPD100N04S4-02FEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R : 4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAX