IPD110N12N3G Specs and Replacement

Type Designator: IPD110N12N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 408 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO252

IPD110N12N3G substitution

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IPD110N12N3G datasheet

 3.1. Size:587K  infineon
 ipds110n12n3g ips110n12n3g ips110n12n3 ipd110n12n3.pdf pdf_icon

IPD110N12N3G

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 120V OptiMOS 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev. 2.4 Final Industrial & Multimarket IPD110N12N3 G IPS110N12N3 G OptiMOSTM3Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on),max 11 m Excellent gate charge x R product (FOM) DS(on)... See More ⇒

 3.2. Size:242K  inchange semiconductor
 ipd110n12n3.pdf pdf_icon

IPD110N12N3G

isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒

Detailed specifications: IPD079N06L3G, IPD082N10N3G, IPD088N04LG, IPD088N06N3G, IPD090N03LG, IPD096N08N3G, IPD105N03LG, IPD105N04LG, IRFP064N, IPD122N10N3G, IPD127N06LG, IPD12CN10NG, IPD135N03LG, IPD135N08N3G, IPD144N06NG, IPD160N04LG, IPD16CN10NG

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