All MOSFET. IPD122N10N3G Datasheet

 

IPD122N10N3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD122N10N3G
   Marking Code: 122N10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 59 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0122 Ohm
   Package: TO252

 IPD122N10N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD122N10N3G Datasheet (PDF)

 ..1. Size:503K  infineon
 ipd122n10n3g.pdf

IPD122N10N3G IPD122N10N3G

IPD122N10N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max 12.2 mW Excellent gate charge x R product (FOM)DS(on)ID 59 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-fre

 3.1. Size:242K  inchange semiconductor
 ipd122n10n3.pdf

IPD122N10N3G IPD122N10N3G

isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3FEATURESStatic drain-source on-resistance:RDS(on)12.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 1

 9.1. Size:858K  infineon
 ipb12cn10ng ipd12cn10ng ipi12cn10ng ipp12cn10ng ipb12cn10ng ipi12cn10ng.pdf

IPD122N10N3G IPD122N10N3G

IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM)DS(on)ID 67 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

 9.2. Size:623K  infineon
 ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf

IPD122N10N3G IPD122N10N3G

IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

 9.3. Size:1000K  infineon
 ipd127n06lg.pdf

IPD122N10N3G IPD122N10N3G

% # ! % (>.;?6?@%>EFeaturesD P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> 1 7mWD n) m xP ( 381>>581>35=5>C

 9.4. Size:549K  infineon
 ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdf

IPD122N10N3G IPD122N10N3G

IPB12CNE8N G IPD12CNE8N GIPI12CNE8N G IPP12CNE8N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 85 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1

 9.5. Size:241K  inchange semiconductor
 ipd127n06l.pdf

IPD122N10N3G IPD122N10N3G

isc N-Channel MOSFET Transistor IPD127N06L,IIPD127N06LFEATURESStatic drain-source on-resistance:RDS(on)12.7mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV

Datasheet: IPD082N10N3G , IPD088N04LG , IPD088N06N3G , IPD090N03LG , IPD096N08N3G , IPD105N03LG , IPD105N04LG , IPD110N12N3G , IRF830 , IPD127N06LG , IPD12CN10NG , IPD135N03LG , IPD135N08N3G , IPD144N06NG , IPD160N04LG , IPD16CN10NG , IPD170N04NG .

History: IRF4410A

 

 
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