All MOSFET. IPD144N06NG Datasheet

 

IPD144N06NG Datasheet and Replacement


   Type Designator: IPD144N06NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0144 Ohm
   Package: TO252
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IPD144N06NG Datasheet (PDF)

 4.1. Size:992K  infineon
 ipd144n06n g2.pdf pdf_icon

IPD144N06NG

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 9.1. Size:147K  infineon
 ipd14n06s2-80.pdf pdf_icon

IPD144N06NG

IPD14N06S2-80OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 80mDS(on),max Automotive AEC Q101 qualifiedI 17 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD14N06S2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF7468TR | KI2315BDS | SVS5N70DTR | GSM4936S | FTP08N06A | 2SK3370 | ATM2N65TE

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