IPD144N06NG Datasheet and Replacement
Type Designator: IPD144N06NG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0144 Ohm
Package: TO252
IPD144N06NG substitution
IPD144N06NG Datasheet (PDF)
ipd144n06n g2.pdf

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ipd14n06s2-80.pdf

IPD14N06S2-80OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 80mDS(on),max Automotive AEC Q101 qualifiedI 17 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD14N06S2
Datasheet: IPD105N03LG , IPD105N04LG , IPD110N12N3G , IPD122N10N3G , IPD127N06LG , IPD12CN10NG , IPD135N03LG , IPD135N08N3G , IRF840 , IPD160N04LG , IPD16CN10NG , IPD170N04NG , IPD180N10N3G , IPD200N15N3G , IPD220N06L3G , IPD230N06LG , IPD230N06NG .
History: IPD135N03LG | STD35NF3LLT4 | IXTT140N10P | SSF2341E | 2SJ144 | IPD60R600PFD7S | NCE65N460
Keywords - IPD144N06NG MOSFET datasheet
IPD144N06NG cross reference
IPD144N06NG equivalent finder
IPD144N06NG lookup
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History: IPD135N03LG | STD35NF3LLT4 | IXTT140N10P | SSF2341E | 2SJ144 | IPD60R600PFD7S | NCE65N460



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