IPD180N10N3G Specs and Replacement

Type Designator: IPD180N10N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 43 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 237 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO252

IPD180N10N3G substitution

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IPD180N10N3G datasheet

 ..1. Size:506K  infineon
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IPD180N10N3G

IPD180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max TO-263 18 mW Excellent gate charge x R product (FOM) DS(on) ID 43 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for hig... See More ⇒

 3.1. Size:242K  inchange semiconductor
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IPD180N10N3G

isc N-Channel MOSFET Transistor IPD180N10N3,IIPD180N10N3 FEATURES Static drain-source on-resistance RDS(on) 18m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100... See More ⇒

Detailed specifications: IPD127N06LG, IPD12CN10NG, IPD135N03LG, IPD135N08N3G, IPD144N06NG, IPD160N04LG, IPD16CN10NG, IPD170N04NG, 50N06, IPD200N15N3G, IPD220N06L3G, IPD230N06LG, IPD230N06NG, IPD250N06N3G, IPD25CN10NG, IPD320N20N3G, IPD33CN10NG

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.