IPD180N10N3G Datasheet and Replacement
Type Designator: IPD180N10N3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 43 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 237 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO252
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IPD180N10N3G Datasheet (PDF)
ipd180n10n3g.pdf

IPD180N10N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max TO-263 18 mW Excellent gate charge x R product (FOM)DS(on)ID 43 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for hig
ipd180n10n3.pdf

isc N-Channel MOSFET Transistor IPD180N10N3,IIPD180N10N3FEATURESStatic drain-source on-resistance:RDS(on)18mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 20N03L-TO252 | 2N6762JTXV
Keywords - IPD180N10N3G MOSFET datasheet
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History: 20N03L-TO252 | 2N6762JTXV



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