All MOSFET. IPD180N10N3G Datasheet

 

IPD180N10N3G Datasheet and Replacement


   Type Designator: IPD180N10N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 43 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 237 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO252
 

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IPD180N10N3G Datasheet (PDF)

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IPD180N10N3G

IPD180N10N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max TO-263 18 mW Excellent gate charge x R product (FOM)DS(on)ID 43 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for hig

 3.1. Size:242K  inchange semiconductor
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IPD180N10N3G

isc N-Channel MOSFET Transistor IPD180N10N3,IIPD180N10N3FEATURESStatic drain-source on-resistance:RDS(on)18mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

Datasheet: IPD127N06LG , IPD12CN10NG , IPD135N03LG , IPD135N08N3G , IPD144N06NG , IPD160N04LG , IPD16CN10NG , IPD170N04NG , 50N06 , IPD200N15N3G , IPD220N06L3G , IPD230N06LG , IPD230N06NG , IPD250N06N3G , IPD25CN10NG , IPD320N20N3G , IPD33CN10NG .

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