IPD220N06L3G Specs and Replacement

Type Designator: IPD220N06L3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO252

IPD220N06L3G substitution

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IPD220N06L3G datasheet

 ..1. Size:448K  infineon
ipd220n06l3 ipd220n06l3g.pdf pdf_icon

IPD220N06L3G

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 3.1. Size:242K  inchange semiconductor
ipd220n06l3.pdf pdf_icon

IPD220N06L3G

isc N-Channel MOSFET Transistor IPD220N06L3,IIPD220N06L3 FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 ... See More ⇒

 9.1. Size:150K  infineon
ipd22n08s2l-50.pdf pdf_icon

IPD220N06L3G

IPD22N08S2L-50 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel Logic Level - Enhancement mode R 50 m DS(on),max Automotive AEC Q101 qualified I 25 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD22N08S2L... See More ⇒

Detailed specifications: IPD135N03LG, IPD135N08N3G, IPD144N06NG, IPD160N04LG, IPD16CN10NG, IPD170N04NG, IPD180N10N3G, IPD200N15N3G, IRFZ44, IPD230N06LG, IPD230N06NG, IPD250N06N3G, IPD25CN10NG, IPD320N20N3G, IPD33CN10NG, IPD350N06LG, IPD400N06NG

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