IPD230N06LG Specs and Replacement

Type Designator: IPD230N06LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO252

IPD230N06LG substitution

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IPD230N06LG datasheet

 ..1. Size:1005K  infineon
 ipd230n06lg.pdf pdf_icon

IPD230N06LG

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 5.1. Size:1008K  infineon
 ipd230n06ng.pdf pdf_icon

IPD230N06LG

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Detailed specifications: IPD135N08N3G, IPD144N06NG, IPD160N04LG, IPD16CN10NG, IPD170N04NG, IPD180N10N3G, IPD200N15N3G, IPD220N06L3G, IRF640, IPD230N06NG, IPD250N06N3G, IPD25CN10NG, IPD320N20N3G, IPD33CN10NG, IPD350N06LG, IPD400N06NG, IPD49CN10NG

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