All MOSFET. IPD230N06NG Datasheet

 

IPD230N06NG Datasheet and Replacement


   Type Designator: IPD230N06NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO252
 

 IPD230N06NG substitution

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IPD230N06NG Datasheet (PDF)

 ..1. Size:1008K  infineon
 ipd230n06ng.pdf pdf_icon

IPD230N06NG

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 5.1. Size:1005K  infineon
 ipd230n06lg.pdf pdf_icon

IPD230N06NG

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Datasheet: IPD144N06NG , IPD160N04LG , IPD16CN10NG , IPD170N04NG , IPD180N10N3G , IPD200N15N3G , IPD220N06L3G , IPD230N06LG , IRF1404 , IPD250N06N3G , IPD25CN10NG , IPD320N20N3G , IPD33CN10NG , IPD350N06LG , IPD400N06NG , IPD49CN10NG , IPD50N04S4-08 .

History: OSG60R099KT3F | DH400P06F | SWP100R10VT | RUQ050N02FRA | CTD03N4P3 | OSG65R099HT3ZF | BSC036NE7NS3G

Keywords - IPD230N06NG MOSFET datasheet

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