IPD50R399CP MOSFET Datasheet: N-Ch, 500V, 9A. Full specification with pinout and replacement list

IPD50R399CP Specs and Replacement

   Type Designator: IPD50R399CP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.399 Ohm
   Package: TO252

IPD50R399CP substitution

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IPD50R399CP datasheet

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IPD50R399CP CoolMOSTM Power Transistor Product Summary Product Summary Features V"1 @Tjmax 550 V V"1 @Tjmax 550 V V *EL;HI ... See More ⇒

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isc N-Channel MOSFET Transistor IPD50R399CP,IIPD50R399CP FEATURES Static drain-source on-resistance RDS(on) 399m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS ... See More ⇒

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPD50R380CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R380CE DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p... See More ⇒