All MOSFET. IPD50R399CP Datasheet

 

IPD50R399CP MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD50R399CP

Marking Code: 5R399P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 17 nC

Rise Time (tr): 14 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 0.399 Ohm

Package: TO252

IPD50R399CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD50R399CP Datasheet (PDF)

0.1. ipd50r399cp rev2 1b.pdf Size:658K _infineon

IPD50R399CP
IPD50R399CP

IPD50R399CP CoolMOSTM Power Transistor Product Summary Product Summary Features V"1 @Tjmax 550 V V"1 @Tjmax 550 V V *EL;HI 7G=; Qg typ 17 nC Qg typ 17 nC V #MIG;C; :K :I G7I;: V &?=> F;7A 9JGG;DI 97F78?B?IN V .8 0.2. ipd50r399cp.pdf Size:242K _inchange_semiconductor

IPD50R399CP
IPD50R399CP

isc N-Channel MOSFET Transistor IPD50R399CP,IIPD50R399CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤399mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS

 7.1. ipd50r380ce.pdf Size:1840K _infineon

IPD50R399CP
IPD50R399CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPD50R380CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R380CE DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p

7.2. ipd50r3k0ce ipu50r3k0ce.pdf Size:2513K _infineon

IPD50R399CP
IPD50R399CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPx50R3K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R3K0CE, IPU50R3K0CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

 7.3. ipd50r380ce.pdf Size:242K _inchange_semiconductor

IPD50R399CP
IPD50R399CP

isc N-Channel MOSFET Transistor IPD50R380CE,IIPD50R380CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS

7.4. ipd50r3k0ce.pdf Size:241K _inchange_semiconductor

IPD50R399CP
IPD50R399CP

isc N-Channel MOSFET Transistor IPD50R3K0CE,IIPD50R3K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V G

Datasheet: IPD33CN10NG , IPD350N06LG , IPD400N06NG , IPD49CN10NG , IPD50N04S4-08 , IPD50N04S4-10 , IPD50N04S4L-08 , IPD50P04P4L-11 , IRF510 , IPD50R520CP , IPD530N15N3G , IPD600N25N3G , IPD60R1K4C6 , IPD60R2K0C6 , IPD60R380C6 , IPD60R385CP , IPD60R3K3C6 .

 

 
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