All MOSFET. IPD600N25N3G Datasheet

 

IPD600N25N3G MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD600N25N3G

Marking Code: 600N25N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 136 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 22 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 101 pF

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: TO252

IPD600N25N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD600N25N3G Datasheet (PDF)

0.1. ipd600n25n3g.pdf Size:486K _infineon

IPD600N25N3G
IPD600N25N3G

IPD600N25N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V N-channel, normal levelRDS(on),max 60mW Excellent gate charge x R product (FOM)DS(on)ID 25 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to

3.1. ipd600n25n3.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD600N25N3,IIPD600N25N3FEATURESStatic drain-source on-resistance:RDS(on)60mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 250

 9.1. ipd60r600c6 ipb60r600c6 ipp60r600c6 ipa60r600c6.pdf Size:1224K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R600C6Data SheetRev. 2.5FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R600C6, IPB60R600C6IPP60R600C6, IPA60R600C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the super

9.2. ipd60r180p7s.pdf Size:920K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R180P7SMOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

 9.3. ipa60r800ce ipd60r800ce.pdf Size:1618K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R800CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R800CE, IPA60R800CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

9.4. ipd60r380e6.pdf Size:998K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.5FinalPower Management & Multimarket C lMO e n i t I I I D O O D 1 Descriptint b tabC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n 2pi neee b In ine n e n l ie C

 9.5. ipd60n10s4-12.pdf Size:562K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60N10S4-12OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max 12.2mWID 60 AFeatures N-channel - Normal Level - Enhancement modePG-TO252-3-313 AEC qualifiedTAB MSL1 up to 260C peak reflow 175C operating temperature13 Green Product (RoHS compliant) 100% Avalanche testedDrainpin 2/TabGateType Package Markingpin 1IP

9.6. ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdf Size:2519K _infineon

IPD600N25N3G
IPD600N25N3G

IPB60R600P6, IPP60R600P6, IPD60R600P6,IPA60R600P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli

9.7. ipd60r210pfd7s.pdf Size:635K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R210PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

9.8. ipd60r380c6.pdf Size:1213K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFET+ =L9D - PA

9.9. ipd60r1k0pfd7s.pdf Size:917K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R1K0PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

9.10. ipa60r650ce ipd60r650ce.pdf Size:1677K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R650CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R650CE, IPA60R650CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

9.11. ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf Size:1368K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

9.12. ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf Size:2739K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R380P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R380P6, IPA60R380P6, IPD60R380P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor

9.13. ipd60r170cfd7.pdf Size:1027K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R170CFD7MOSFETDPAK600V CoolMOS CFD7 Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications such as

9.14. ipd60r180c7.pdf Size:1072K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R180C7MOSFETDPAK600V CoolMOS C7 Power DeviceCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.21The 600V C7 is the first technology eve

9.15. ipp60r380e6 ipa60r380e6 ipd60r380e6.pdf Size:943K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.6FinalPower Management & Multimarket C lMO e n i t I I I D O O D 1 Descriptint b tabC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n 2pi neee b In ine n e n l ie C

9.16. ipd60r520c6 2.0.pdf Size:917K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFET+ =L9D - PA

9.17. ipd60r360cfd7.pdf Size:1023K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R360CFD7MOSFETDPAK600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications suc

9.18. ipa60r460ce ipd60r460ce.pdf Size:1709K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R460CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R460CE, IPA60R460CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

9.19. ipd60r400ce ips60r400ce ipa60r400ce.pdf Size:1345K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R400CE, IPS60R400CE, IPA60R400CEMOSFETDPAK IPAK SL PG-TO 220 FP600V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplica

9.20. ipd60r600p7s.pdf Size:912K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R600P7SMOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

9.21. ipa60r600p6 ipd60r600p6 ipp60r600p6.pdf Size:2688K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R600P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R600P6, IPA60R600P6, IPD60R600P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor

9.22. ipd60r2k1ce ipu60r2k1ce.pdf Size:2232K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R2K1CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R2K1CE, IPU60R2K1CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

9.23. ipd60r1k5pfd7s.pdf Size:602K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R1K5PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

9.24. ipd60n10s4l-12.pdf Size:130K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60N10S4L-12OptiMOSTM-T2 Power-TransistorProduct SummaryV 100 VDSR 12mWDS(on),maxI 60 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualifiedTAB MSL1 up to 260C peak reflow 175C operating temperature13 Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD60N10S4L-12 PG-TO252-3-313 4N10L12Maxi

9.25. ipd60r280pfd7s.pdf Size:611K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R280PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

9.26. ipd60r800ce ipa60r800ce.pdf Size:1190K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R800CE, IPA60R800CEMOSFETDPAK PG-TO 220 FP600V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

9.27. ipd60r3k3c6.pdf Size:958K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPD60R3K3C6Data SheetRev. 2.3FinalIndustrial & Multimarket +

9.28. ipd60r280p7s.pdf Size:911K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R280P7SMOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

9.29. ipd60r600cp.pdf Size:645K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R600CPCIMOS #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO252 :

9.30. ipd60r280p7.pdf Size:1081K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R280P7MOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE

9.31. ipd60r520cp.pdf Size:647K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R520CPCIMOSTM #:A0:9 688DF9>CC6CH PGTO252 ::7!"% # 4= /0=4290/ 1:H8=>C

9.32. ipd60r280cfd7.pdf Size:1184K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R280CFD7MOSFETDPAK600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications suc

9.33. ipd60r450e6.pdf Size:2131K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFET+ =L9D - PA

9.34. ipd60r1k4c6 2.0.pdf Size:1322K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFET+

9.35. ipd60r650ce ipa60r650ce.pdf Size:867K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R650CE, IPA60R650CEMOSFETDPAK PG-TO 220 FP600V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

9.36. ipd60r360p7s.pdf Size:1100K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R360P7SMOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

9.37. ipd60r360p7.pdf Size:905K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R360P7MOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE

9.38. ipd60r600pfd7s.pdf Size:948K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R600PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

9.39. ipd60r950c6.pdf Size:1680K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R950C6 Data SheetRev. 2.1, 2010-03-11FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6IPP60R950C6, IPA60R950C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

9.40. ipd60r600c6.pdf Size:1051K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFET+ =L9D - PA

9.41. ipd60r385cp.pdf Size:590K _infineon

IPD600N25N3G
IPD600N25N3G

CoolMOS CP 600V600V CoolMOS CP Power TransistorIPD60R385CPData SheetRev. 2.4FinalPower Management & MultimarketIPD60R385CPCIMOS#:A0

9.42. ipd60r600e6.pdf Size:1339K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R600E6Data SheetRev. 2.0, 2010-04-12FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6IPD60R600E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

9.43. ipd60r950c6 ipb60r950c6 ipp60r950c6 ipa60r950c6.pdf Size:1159K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R950C6Data SheetRev. 2.4FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6IPP60R950C6, IPA60R950C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup

9.44. ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf Size:2540K _infineon

IPD600N25N3G
IPD600N25N3G

IPB60R380P6, IPP60R380P6, IPD60R380P6,IPA60R380P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli

9.45. ipd60r600p7.pdf Size:1186K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R600P7MOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE

9.46. ipb60r600p6 ipp60r600p6 ipa60r600p6 ipd60r600p6.pdf Size:2849K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R600P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPB60R600P6, IPP60R600P6, IPA60R600P6,IPD60R600P6DPAK TO-220 TO-220 FP1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFET

9.47. ipa60r400ce ipd60r400ce.pdf Size:1706K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R400CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R400CE, IPA60R400CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

9.48. ipd60r1k4c6.pdf Size:1304K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPD60 1K4C6 Data Sheet ev. 2.0 20100719Final Industrial & Multimarket600V CIMOS C6 Pwer Transistr IPD60R1K4C61 DescriptinCoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (S ) principle and pioneer

9.49. ipd60r2k0pfd7s.pdf Size:603K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R2K0PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

9.50. ipd60r600e6 ipp60r600e6 ipa60r600e6.pdf Size:1143K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R600E6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6IPA60R600E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) pri

9.51. ipd60r460ce ipa60r460ce.pdf Size:1235K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R460CE, IPA60R460CEMOSFETDPAK PG-TO 220 FP600V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

9.52. ipd60r180p7.pdf Size:1102K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R180P7MOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE

9.53. ipd60r210cfd7.pdf Size:825K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R210CFD7MOSFETDPAK600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications suc

9.54. ipd60r2k0c6 2.0.pdf Size:1300K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFET+

9.55. ipd60r450e6 ipp60r450e6 ipa60r450e6.pdf Size:1210K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R450E6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS E6 Pwer Transistr IPD60R450E6, IPP60R450E6IPA60R450E61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superjunction (S )

9.56. ipd60r145cfd7.pdf Size:1157K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R145CFD7MOSFETDPAK600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications suc

9.57. ipd60r3k3c6 2.0.pdf Size:1347K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFET+

9.58. ipd60r750e6 2.0 .pdf Size:2043K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFET+ =L9D - PA

9.59. ipd60r2k0c6.pdf Size:938K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorlPD60R2KOC6Data SheetRev. 2.1FinalIndustrial & Multimarket +

9.60. ipd60r1k0ce ipu60r1k0ce.pdf Size:2314K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R1K0CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R1K0CE, IPU60R1K0CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

9.61. ipd60r1k5ce ipu60r1k5ce.pdf Size:2307K _infineon

IPD600N25N3G
IPD600N25N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R1K5CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R1K5CE, IPU60R1K5CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

9.62. ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf Size:1375K _infineon

IPD600N25N3G
IPD600N25N3G

IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CEMOSFETDPAK IPAK IPAK SL600V CoolMOS CE Power TransistortabtabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 11233price-performance optimized platform enabling to target cost sensitivea

9.63. ipd60r180p7s.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R180P7SIIPD60R180P7SFEATURESStatic drain-source on-resistance:RDS(on)0.18Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 V

9.64. ipd60r380e6.pdf Size:210K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPD60R380E6FEATURESWith TO-252(DPAK) packagingWith low gate drive requirementsVery high commutation ruggednessExtremely high frequency operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLCD&PDP TVPC si

9.65. ipd60r380c6.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6FEATURESStatic drain-source on-resistance:RDS(on)0.38Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

9.66. ipd60r170cfd7.pdf Size:241K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7FEATURESStatic drain-source on-resistance:RDS(on)170mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved MOSFET reverse diode dv/dt and diF/dt ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

9.67. ipd60r600p6.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R600P6,IIPD60R600P6FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

9.68. ipd60r1k5ce.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R1K5CE,IIPD60R1K5CEFEATURESStatic drain-source on-resistance:RDS(on)1.5Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

9.69. ipd60r180c7.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R180C7IIPD60R180C7FEATURESStatic drain-source on-resistance:RDS(on)0.18Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

9.70. ipd60r600p7s.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R600P7S,IIPD60R600P7SFEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

9.71. ipd60r3k3c6.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R3K3C6,IIPD60R3K3C6FEATURESStatic drain-source on-resistance:RDS(on)3.3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

9.72. ipd60r280p7s.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R280P7SIIPD60R280P7SFEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain

9.73. ipd60r600cp.pdf Size:241K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CPFEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

9.74. ipd60r280p7.pdf Size:243K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R280P7IIPD60R280P7FEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for a wide variety of applications and power rangesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

9.75. ipd60r520cp.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R520CP,IIPD60R520CPFEATURESStatic drain-source on-resistance:RDS(on)0.52Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

9.76. ipd60r280cfd7.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R280CFD7IIPD60R280CFD7FEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved MOSFET reverse diode dv/dt and diF/dt ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

9.77. ipd60r450e6.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R450E6,IIPD60R450E6FEATURESStatic drain-source on-resistance:RDS(on)0.45Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

9.78. ipd60r360p7s.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7SFEATURESStatic drain-source on-resistance:RDS(on)0.36Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

9.79. ipd60r360p7.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7FEATURESStatic drain-source on-resistance:RDS(on)0.36Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

9.80. ipd60r3k4ce.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R3K4CE,IIPD60R3K4CEFEATURESStatic drain-source on-resistance:RDS(on)3.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

9.81. ipd60r950c6.pdf Size:241K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R950C6IIPD60R950C6FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

9.82. ipd60r600c6.pdf Size:241K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

9.83. ipd60r385cp.pdf Size:243K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R385CP,IIPD60R385CPFEATURESStatic drain-source on-resistance:RDS(on)0.385Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

9.84. ipd60r600e6.pdf Size:241K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

9.85. ipd60r460ce.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CEFEATURESStatic drain-source on-resistance:RDS(on)0.46Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

9.86. ipd60r600p7.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R600P7,IIPD60R600P7FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

9.87. ipd60r1k4c6.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R1K4C6,IIPD60R1K4C6FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

9.88. ipd60r750e6.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R750E6,IIPD60R750E6FEATURESStatic drain-source on-resistance:RDS(on)0.75Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

9.89. ipd60r800ce.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R800CE,IIPD60R800CEFEATURESStatic drain-source on-resistance:RDS(on)0.8Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

9.90. ipd60r400ce.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R400CE,IIPD60R400CEFEATURESStatic drain-source on-resistance:RDS(on)0.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

9.91. ipd60r380p6.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R380P6,IIPD60R380P6FEATURESStatic drain-source on-resistance:RDS(on)0.38Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

9.92. ipd60r650ce.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R650CE,IIPD60R650CEFEATURESStatic drain-source on-resistance:RDS(on)0.65Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

9.93. ipd60r2k1ce.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R2K1CE,IIPD60R2K1CEFEATURESStatic drain-source on-resistance:RDS(on)2.1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

9.94. ipd60r2k0c6.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6FEATURESStatic drain-source on-resistance:RDS(on)2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV G

9.95. ipd60r1k0ce.pdf Size:242K _inchange_semiconductor

IPD600N25N3G
IPD600N25N3G

isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CEFEATURESStatic drain-source on-resistance:RDS(on)1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV G

Datasheet: IPD49CN10NG , IPD50N04S4-08 , IPD50N04S4-10 , IPD50N04S4L-08 , IPD50P04P4L-11 , IPD50R399CP , IPD50R520CP , IPD530N15N3G , IRF730 , IPD60R1K4C6 , IPD60R2K0C6 , IPD60R380C6 , IPD60R385CP , IPD60R3K3C6 , IPD60R450E6 , IPD60R520C6 , IPD60R520CP .

 

 
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