IPD60R2K0C6 Datasheet. Specs and Replacement

Type Designator: IPD60R2K0C6  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO252

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IPD60R2K0C6 substitution

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IPD60R2K0C6 datasheet

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IPD60R2K0C6

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isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6 FEATURES Static drain-source on-resistance RDS(on) 2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V G... See More ⇒

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IPD60R2K0PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d... See More ⇒

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Detailed specifications: IPD50N04S4-10, IPD50N04S4L-08, IPD50P04P4L-11, IPD50R399CP, IPD50R520CP, IPD530N15N3G, IPD600N25N3G, IPD60R1K4C6, IRF4905, IPD60R380C6, IPD60R385CP, IPD60R3K3C6, IPD60R450E6, IPD60R520C6, IPD60R520CP, IPD60R600C6, IPD60R600CP

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.