All MOSFET. IPD60R2K0C6 Datasheet

 

IPD60R2K0C6 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD60R2K0C6

Marking Code: 6R2K0C6

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 22.3 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 2.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 6.7 nC

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 12 pF

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: TO252

IPD60R2K0C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD60R2K0C6 Datasheet (PDF)

0.1. ipd60r2k0c6 2.0.pdf Size:1300K _infineon

IPD60R2K0C6
IPD60R2K0C6

MOSFET + )>.;?6?@<> & ' ! 1 Descriptiסn !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@6.1. ipd60r2k1ce ipu60r2k1ce.pdf Size:2232K _infineon

IPD60R2K0C6
IPD60R2K0C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R2K1CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R2K1CE, IPU60R2K1CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

 7.1. ipd60r280p7s.pdf Size:1082K _infineon

IPD60R2K0C6
IPD60R2K0C6

IPD60R280P7S MOSFET DPAK 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSF

7.2. ipd60r280p7.pdf Size:1081K _infineon

IPD60R2K0C6
IPD60R2K0C6

IPD60R280P7 MOSFET DPAK 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFE

 7.3. ipd60r280cfd7.pdf Size:1184K _infineon

IPD60R2K0C6
IPD60R2K0C6

IPD60R280CFD7 MOSFET DPAK 600V CoolMOSª CFD7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 series and is an optimized platform tailored to target soft switching applications suc

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