All MOSFET. IPD60R3K3C6 Datasheet

 

IPD60R3K3C6 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD60R3K3C6

Marking Code: 6R3K3C6

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 18.1 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 1.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 4.6 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 9 pF

Maximum Drain-Source On-State Resistance (Rds): 3.3 Ohm

Package: TO252

IPD60R3K3C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD60R3K3C6 Datasheet (PDF)

0.1. ipd60r3k3c6 2.0.pdf Size:1347K _infineon

IPD60R3K3C6
IPD60R3K3C6

MOSFET + )>.;?6?@<> & ' ! 1 Descriptiסn !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@6.1. ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf Size:1375K _infineon

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IPD60R3K3C6

IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE MOSFET DPAK IPAK IPAK SL 600V CoolMOSª CE Power Transistor tab tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS™ CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive a

 7.1. ipd60r380e6.pdf Size:998K _infineon

IPD60R3K3C6
IPD60R3K3C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.5 Final Power Management & Multimarket C lMO eг г n i t г I I I D O‐ O‐ D 1 Descriptiסn t b tab C lMO i гe l ti n г te n l г i lt e p eг MO e i ne г in t t e peгj n ti n ) pгin iple n 2 pi neeгe b In ine n e n l ie C

7.2. ipd60r380c6.pdf Size:1213K _infineon

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 7.3. ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf Size:2739K _infineon

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IPD60R3K3C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R380P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPP60R380P6, IPA60R380P6, IPD60R380P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accor

7.4. ipd60r360p7s.pdf Size:1100K _infineon

IPD60R3K3C6
IPD60R3K3C6

IPD60R360P7S MOSFET DPAK 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSF

 7.5. ipd60r360p7.pdf Size:905K _infineon

IPD60R3K3C6
IPD60R3K3C6

IPD60R360P7 MOSFET DPAK 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFE

7.6. ipd60r385cp.pdf Size:670K _infineon

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IPD60R3K3C6

IPD60R385CP CססIMOS® #:A0< &<,9=4=>:< #<:/?.> %?88,7.7. ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf Size:2540K _infineon

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IPD60R3K3C6

IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 MOSFET D²PAK PG-TO 220 DPAK 600V CoolMOSª P6 Power Transistor tab tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS™ P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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