All MOSFET. IPD640N06LG Datasheet

 

IPD640N06LG MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD640N06LG

Marking Code: 640N06L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 47 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 10 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 94 pF

Maximum Drain-Source On-State Resistance (Rds): 0.064 Ohm

Package: TO252

IPD640N06LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD640N06LG Datasheet (PDF)

4.1. ipd640n06l g.pdf Size:993K _infineon

IPD640N06LG
IPD640N06LG

% # ! % (>.;?6?@%>EFeaturesD P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> 4 mWD n) m xP ( 381>>581>35=5>C

4.2. ipd640n06l.pdf Size:241K _inchange_semiconductor

IPD640N06LG
IPD640N06LG

isc N-Channel MOSFET Transistor IPD640N06L,IIPD640N06LFEATURESStatic drain-source on-resistance:RDS(on)64mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Ga

 9.1. ipd64cn10ng ipu64cn10ng.pdf Size:781K _1

IPD640N06LG
IPD640N06LG

$ " " $( " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 100 VDSS ( 5:3@@7> @AD?3> >7H7> 64 m DS(on) maxS J57>>7@F 93F7 5:3D97 J BDA6G5F !) ' DS(on) 17 ADS 07DK >AI A@ D7E;EF3@57 DS(on)S V AB7D3F;@9 F7?B7D3FGD7S *4 8D77 >736 B>3F;@9 , A#- 5A?B>;3@F1)S + G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@S $673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE D

Datasheet: IPD60R450E6 , IPD60R520C6 , IPD60R520CP , IPD60R600C6 , IPD60R600CP , IPD60R600E6 , IPD60R750E6 , IPD60R950C6 , BUZ90 , IPD64CN10NG , IPD65R380C6 , IPD65R380E6 , IPD65R600C6 , IPD65R600E6 , IPD65R660CFD , IPD70P04P4-09 , IPD75N04S4-06 .

 

 
Back to Top