All MOSFET. IPD640N06LG Datasheet

 

IPD640N06LG MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD640N06LG

Marking Code: 640N06L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 47 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 10 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 94 pF

Maximum Drain-Source On-State Resistance (Rds): 0.064 Ohm

Package: TO252

IPD640N06LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD640N06LG Datasheet (PDF)

4.1. ipd640n06l g.pdf Size:993K _infineon

IPD640N06LG
IPD640N06LG

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IPD640N06LG

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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