All MOSFET. IPD65R600C6 Datasheet

 

IPD65R600C6 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD65R600C6

Marking Code: 65C6600

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 63 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 7.3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 23 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO252

IPD65R600C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD65R600C6 Datasheet (PDF)

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IPD65R600C6
IPD65R600C6

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IPD65R600C6
IPD65R600C6

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 0.3. ipd65r600c6.pdf Size:241K _inchange_semiconductor

IPD65R600C6
IPD65R600C6

isc N-Channel MOSFET Transistor IPD65R600C6,IIPD65R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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