IPD65R600C6 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD65R600C6
Marking Code: 65C6600
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 63 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 7.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 23 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 30 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO252
IPD65R600C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD65R600C6 Datasheet (PDF)
0.1. ipb65r600c6 ipa65r600c6 ipp65r600c6 ipd65r600c6 ipi65r600c6.pdf Size:2092K _infineon
MOSFET
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+ =L9D - PA<= 1=E A;GF 5.1. ipd65r600e6.pdf MOSFET
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