All MOSFET. IPD70P04P4-09 Datasheet

 

IPD70P04P4-09 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD70P04P4-09

Marking Code: 4P0409

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 73 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 54 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 1400 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0089 Ohm

Package: TO252

IPD70P04P4-09 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD70P04P4-09 Datasheet (PDF)

0.1. ipd70p04p4-09 ds 10.pdf Size:132K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70P04P4-09 OptiMOS®-P2 Power-Transistor Product Summary V -40 V DS R 8.9 mΩ DS(on) I -73 A D Features PG-TO252-3-313 • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70P04P4-09 PG-TO252-3-313 4P0409 Maxi

9.1. ipd70n10s3l-12 ds 1 1.pdf Size:176K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70N10S3L-12 OptiMOS®-T Power-Transistor Product Summary V 100 V DS R 11.5 mW DS(on),max I 70 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70N10S3L-12 PG-TO252-3-11 QN10L12

9.2. ipd70n04s3-07 ds 1 0.pdf Size:182K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70N04S3-07 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 6.0 mΩ DS(on),max I 82 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70N04S3-07 PG-TO252-3-11 QN0407 Max

 9.3. ipd70r1k4ce ips70r1k4ce.pdf Size:1056K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70R1K4CE, IPS70R1K4CE MOSFET DPAK IPAK SL 700V CoolMOSª CE Power Transistor tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS™ CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh

9.4. ipd70n10s3-12 ds 1 1.pdf Size:175K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70N10S3-12 OptiMOS®-T Power-Transistor Product Summary V 100 V DS R 11.1 mW DS(on),max I 70 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70N10S3-12 PG-TO252-3-11 QN1012 Max

 9.5. ipd70r2k0ce.pdf Size:949K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70R2K0CE MOSFET DPAK 700V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

9.6. ipd70n03s4l-04 ds.pdf Size:186K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70N03S4L-04 OptiMOS®-T2 Power-Transistor Product Summary V 30 V DS R 4.3 mΩ DS(on),max I 70 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD70N03S4L-04

9.7. ipi70r950ce ipd70r950ce ips70r950ce.pdf Size:1320K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPI70R950CE, IPD70R950CE, IPS70R950CE MOSFET I²PAK DPAK IPAK SL 700V CoolMOSª CE Power Transistor tab tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS™ CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applicati

9.8. ipd70r600ce.pdf Size:982K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70R600CE MOSFET DPAK 700V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

Datasheet: IPD60R950C6 , IPD640N06LG , IPD64CN10NG , IPD65R380C6 , IPD65R380E6 , IPD65R600C6 , IPD65R600E6 , IPD65R660CFD , J310 , IPD75N04S4-06 , IPD78CN10NG , IPD800N06NG , IPD90N04S4-02 , IPD90N04S4-03 , IPD90N04S4-05 , IPD90P04P4-05 , IPD90R1K2C3 .

 

 
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