All MOSFET. IPD70P04P4-09 Datasheet

 

IPD70P04P4-09 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD70P04P4-09

Marking Code: 4P0409

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 73 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 54 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 1400 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0089 Ohm

Package: TO252

IPD70P04P4-09 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD70P04P4-09 Datasheet (PDF)

0.1. ipd70p04p4-09 ds 10.pdf Size:132K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70P04P4-09OptiMOS-P2 Power-TransistorProduct SummaryV -40 VDSR 8.9mDS(on)I -73 ADFeaturesPG-TO252-3-313 P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70P04P4-09 PG-TO252-3-313 4P0409Maxi

9.1. ipd70r900p7s.pdf Size:1202K _1

IPD70P04P4-09
IPD70P04P4-09

IPD70R900P7SMOSFETDPAK700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

9.2. ipd70n10s3l-12 ds 1 1.pdf Size:176K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 11.5mWDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N10S3L-12 PG-TO252-3-11 QN10L12

 9.3. ipd70n04s3-07 ds 1 0.pdf Size:182K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70N04S3-07OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 6.0mDS(on),maxI 82 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N04S3-07 PG-TO252-3-11 QN0407Max

9.4. ipd70r1k4ce ips70r1k4ce.pdf Size:1056K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70R1K4CE, IPS70R1K4CEMOSFETDPAK IPAK SL700V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

 9.5. ipd70n10s3-12 ds 1 1.pdf Size:175K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70N10S3-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 11.1mWDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N10S3-12 PG-TO252-3-11 QN1012Max

9.6. ipd70r2k0ce.pdf Size:949K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70R2K0CEMOSFETDPAK700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

9.7. ipd70n03s4l-04 ds.pdf Size:186K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70N03S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 4.3mDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD70N03S4L-04

9.8. ipi70r950ce ipd70r950ce ips70r950ce.pdf Size:1320K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPI70R950CE, IPD70R950CE, IPS70R950CEMOSFETIPAK DPAK IPAK SL700V CoolMOS CE Power Transistortabtab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplicati

9.9. ipd70r600ce.pdf Size:982K _infineon

IPD70P04P4-09
IPD70P04P4-09

IPD70R600CEMOSFETDPAK700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

9.10. ipd70r2k0ce.pdf Size:242K _inchange_semiconductor

IPD70P04P4-09
IPD70P04P4-09

isc N-Channel MOSFET Transistor IPD70R2K0CE,IIPD70R2K0CEFEATURESStatic drain-source on-resistance:RDS(on)2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

9.11. ipd70r1k4ce.pdf Size:243K _inchange_semiconductor

IPD70P04P4-09
IPD70P04P4-09

isc N-Channel MOSFET Transistor IPD70R1K4CE,IIPD70R1K4CEFEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

9.12. ipd70r600ce.pdf Size:242K _inchange_semiconductor

IPD70P04P4-09
IPD70P04P4-09

isc N-Channel MOSFET Transistor IPD70R600CE,IIPD70R600CEFEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

9.13. ipd70r950ce.pdf Size:242K _inchange_semiconductor

IPD70P04P4-09
IPD70P04P4-09

isc N-Channel MOSFET Transistor IPD70R950CE,IIPD70R950CEFEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Datasheet: IPD60R950C6 , IPD640N06LG , IPD64CN10NG , IPD65R380C6 , IPD65R380E6 , IPD65R600C6 , IPD65R600E6 , IPD65R660CFD , J310 , IPD75N04S4-06 , IPD78CN10NG , IPD800N06NG , IPD90N04S4-02 , IPD90N04S4-03 , IPD90N04S4-05 , IPD90P04P4-05 , IPD90R1K2C3 .

 

 
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